Interlayer coupling and the phase transition mechanism of stacked MoS<sub>2</sub>/TaS<sub>2</sub> heterostructures discovered using temperature dependent Raman and photoluminescence spectroscopy

Chen, Miao; Zhou, Bin; Wang, Fang; Xu, Liping; Jiang, Kai; Shang, Liyan; Hu, Zhigao; Chu, Junhao

doi:10.1039/c8ra03436b

Cited by 9 publications

(8 citation statements)

References 38 publications

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“…The solid, dashed, and dotted lines in figure 4(a) are the spectra before H 2 exposure, after exposure at 523 K and 22 Pa, and after exposure at 523 K and 100 Pa, respectively, where the reaction chamber was evacuated after 20 min of H 2 adsorption. Four large peaks can be observed near 102, 243, 306, and 374 cm −1 , as well as other small peaks consistent with the previously reported Raman peaks for 1T-TaS 2 [19,[32][33][34][35][36][37]. Among these peaks, those around 102 and 243 cm −1 were attributed to the zone center modes, which emerge as a consequence of zone folding caused by the lattice modulation of CCDW ordering [33].…”

Section: Resultssupporting

confidence: 87%

Correlation between charge density wave phase transition and hydrogen adsorption in 1T-TaS₂ thin film devices

et al. 2023

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Thin films of tantalum disulfide in the 1T-polytype structural phase (1T-TaS2), a type of metallic two-dimensional (2D) transition metal dichalcogenides (TMDs), are reactive to H2 gas. Interestingly, the electrical resistance of the 1T-TaS2 thin film in the incommensurate charge–density wave (ICCDW) phase with a metallic state decreases when H2 gas is adsorbed on the 1T-TaS2 film and returns to its initial value upon desorption. In contrast, the electrical resistance of the 1T-TaS2 thin film in the nearly commensurate CDW (NCCDW) phase, which has a slight band overlap or small bandgap, does not change upon H2 gas adsorption/desorption. This difference in H2 gas reactivity is a result of differences in the electronic structures of the two 1T-TaS2 phases, namely, the ICCDW and NCCDW phases. Our experimental results indicate advantages of the use of TaS2 for H2 gas sensing compared to other semiconductor 2D-TMDs such as MoS2 and WS2, as a theoretical prediction that the metallic TaS2 captures gas molecules more easily owing to a stronger positive charge at Ta than those in Mo or W of dichalcogenides. Notably, this study is the first example of H2 gas sensing using 1T-TaS2 thin films and demonstrates the possibility of controlling the reactivity to gas by changing the electronic structure via CDW phase transitions.

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Section: Resultssupporting

confidence: 87%

Correlation between charge density wave phase transition and hydrogen adsorption in 1T-TaS₂ thin film devices

et al. 2023

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“…As shown in Figure 4 e,f, the photoluminescence peak position, corresponding to the direct excitonic transition energy in MoS 2 /WSe 2 , is affected by temperature variations. An increasing temperature causes a redshift in the PL peak, indicating a reduction in the energy gap of the heterostructure [ 37 ]. This energy gap refers to the energy of the lowest allowable exciton state, which corresponds to the energy required to create an electron–hole pair in the system.…”

Section: Resultsmentioning

confidence: 99%

Temperature-Dependent Phonon Scattering and Photoluminescence in Vertical MoS2/WSe2 Heterostructures

et al. 2023

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Transition metal dichalcogenide (TMD) monolayers and their heterostructures have attracted considerable attention due to their distinct properties. In this work, we performed a systematic investigation of MoS2/WSe2 heterostructures, focusing on their temperature-dependent Raman and photoluminescence (PL) characteristics in the range of 79 to 473 K. Our Raman analysis revealed that both the longitudinal and transverse modes of the heterostructure exhibit linear shifts towards low frequencies with increasing temperatures. The peak position and intensity of PL spectra also showed pronounced temperature dependency. The activation energy of thermal-quenching-induced PL emissions was estimated as 61.5 meV and 82.6 meV for WSe2 and MoS2, respectively. Additionally, we observed that the spectral full width at half maximum (FWHM) of Raman and PL peaks increases as the temperature increases, and these broadenings can be attributed to the phonon interaction and the expansion of the heterostructure’s thermal coefficients. This work provides valuable insights into the interlayer coupling of van der Waals heterostructures, which is essential for understanding their potential applications in extreme temperatures.

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“…Many phase-change heterostructures reported in literature are based on two-dimensional chalcogenide materials as a phase-change switchable interlayer due to their easy transfer and stacking according to device design. − Heterostructures based on crystalline three-dimensional materials such as VO 2 and La 1– x Sr x MnO 3 highly rely on lattice-matched substrates and are not free-standing, − limiting their adaptability to a wider range of applications.…”

Section: Phase-change Heterostructurementioning

confidence: 99%

A Reconfigurable Remotely Epitaxial VO₂ Electrical Heterostructure

et al. 2019

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The reconfigurability of the electrical heterostructure featured with external variables, such as temperature, voltage, and strain, enabled electronic/optical phase transition in functional layers has great potential for future photonics, computing, and adaptive circuits. VO2 has been regarded as an archetypal phase transition building block with superior metal–insulator transition characteristics. However, the reconfigurable VO2-based heterostructure and the associated devices are rare due to the fundamental challenge in integrating high-quality VO2 in technologically important substrates. In this report, for the first time, we show the remote epitaxy of VO2 and the demonstration of a vertical diode device in a graphene/epitaxial VO2/single-crystalline BN/graphite structure with VO2 as a reconfigurable phase-change material and hexagonal boron nitride (h-BN) as an insulating layer. By diffraction and electrical transport studies, we show that the remote epitaxial VO2 films exhibit higher structural and electrical quality than direct epitaxial ones. By high-resolution transmission electron microscopy and Cs-corrected scanning transmission electron microscopy, we show that a graphene buffered substrate leads to a less strained VO2 film than the bare substrate. In the reconfigurable diode, we find that the Fermi level change and spectral weight shift along with the metal–insulator transition of VO2 could modify the transport characteristics. The work suggests the feasibility of developing a single-crystalline VO2-based reconfigurable heterostructure with arbitrary substrates and sheds light on designing novel adaptive photonics and electrical devices and circuits.

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Interlayer coupling and the phase transition mechanism of stacked MoS₂/TaS₂ heterostructures discovered using temperature dependent Raman and photoluminescence spectroscopy

Cited by 9 publications

References 38 publications

Correlation between charge density wave phase transition and hydrogen adsorption in 1T-TaS₂ thin film devices

Correlation between charge density wave phase transition and hydrogen adsorption in 1T-TaS₂ thin film devices

Temperature-Dependent Phonon Scattering and Photoluminescence in Vertical MoS2/WSe2 Heterostructures

A Reconfigurable Remotely Epitaxial VO₂ Electrical Heterostructure

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Interlayer coupling and the phase transition mechanism of stacked MoS2/TaS2 heterostructures discovered using temperature dependent Raman and photoluminescence spectroscopy

Cited by 9 publications

References 38 publications

Correlation between charge density wave phase transition and hydrogen adsorption in 1T-TaS2 thin film devices

Correlation between charge density wave phase transition and hydrogen adsorption in 1T-TaS2 thin film devices

Temperature-Dependent Phonon Scattering and Photoluminescence in Vertical MoS2/WSe2 Heterostructures

A Reconfigurable Remotely Epitaxial VO2 Electrical Heterostructure

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Product

Resources

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Interlayer coupling and the phase transition mechanism of stacked MoS₂/TaS₂ heterostructures discovered using temperature dependent Raman and photoluminescence spectroscopy

Correlation between charge density wave phase transition and hydrogen adsorption in 1T-TaS₂ thin film devices

Correlation between charge density wave phase transition and hydrogen adsorption in 1T-TaS₂ thin film devices

A Reconfigurable Remotely Epitaxial VO₂ Electrical Heterostructure