Interlayer Exchange Coupling

Stiles, Mark D.

doi:10.1007/3-540-27163-5_4

Cited by 40 publications

(28 citation statements)

References 162 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…While the origin of the interlayer exchange coupling has been studied in detail and is considered to be well understood 4,7,8 , the origin of its temperature dependence remains an open question [26][27][28][29] . Here we briefly summarize the theoretical mechanisms that have been proposed in the literature to explain the reduction of the interlayer exchange coupling at finite temperature.…”

Section: B) Temperature Dependence Of Coupling Fieldmentioning

confidence: 99%

“…However, for two identical interlayer exchange coupled ferromagnetic layers, the intensity of the optical mode is zero and therefore cannot be detected using FMR [14][15][16] . A common approach to circumvent this difficulty is therefore to use an asymmetric trilayer system, for 4 example by using ferromagnets with different film thicknesses. In this paper, we utilize broadband FMR to show that the mode separation, used for experimental determination of the interlayer exchange coupling, has a noticeable frequency dependence in asymmetric IEC systems where the two ferromagnetic layers are of different thicknesses.…”

Section: Introductionmentioning

confidence: 99%

“…(FM) coupled samples. The symbols represent the experimental data and the lines show the full numerical fit to the experimental data using the full model, see equation(4).…”

mentioning

confidence: 99%

See 2 more Smart Citations

Interlayer Exchange Coupling in Asymmetric Co−Fe/Ru/Co−Fe Trilayers Investigated with Broadband Temperature-Dependent Ferromagnetic Resonance

et al. 2017

View full text Add to dashboard Cite

We report on a comprehensive study of the interlayer exchange coupling in CoFe(5nm)/Ru(x)/CoFe(8nm) trilayers (x=0.8…2.8 nm), using broadband ferromagnetic resonance. A systematic frequency dependence of the field separation between the acoustic and optic modes is found, which is caused by different effective magnetizations of the two ferromagnetic layers. Hence, it is shown that the broadband measurements are vital for reducing the systematic error margins in the determination of interlayer exchange coupling using ferromagnetic resonance. We have also investigated the temperature dependence of the interlayer exchange coupling and compare our results with existing theories. It is shown that models which take into account the temperature dependence due to thermal excitations of spin waves within the ferromagnetic layers, have a considerably better agreement with the experiment than models solely based on spacer and interface contributions to the temperature dependence.

show abstract

Section: B) Temperature Dependence Of Coupling Fieldmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Interlayer Exchange Coupling in Asymmetric Co−Fe/Ru/Co−Fe Trilayers Investigated with Broadband Temperature-Dependent Ferromagnetic Resonance

et al. 2017

View full text Add to dashboard Cite

show abstract

“…Interlayer exchange coupling occurs in magnetic multi-layers in which FM layers are separated by a nonmagnetic spacer (for a review, see [145]). Interlayer exchange coupling was first observed for metallic spacers [146], where it was found to oscillate as a function of spacer thickness [147].…”

Section: (D) Interlayer Exchange Couplingmentioning

confidence: 99%

Multi-ferroic and magnetoelectric materials and interfaces

Velev

Jaswal

Tsymbal

2011

Phil. Trans. R. Soc. A.

209

144

View full text Add to dashboard Cite

The existence of multiple ferroic orders in the same material and the coupling between them have been known for decades. However, these phenomena have mostly remained the theoretical domain owing to the fact that in single-phase materials such couplings are rare and weak. This situation has changed dramatically recently for at least two reasons: first, advances in materials fabrication have made it possible to manufacture these materials in structures of lower dimensionality, such as thin films or wires, or in compound structures such as laminates and epitaxial-layered heterostructures. In these designed materials, new degrees of freedom are accessible in which the coupling between ferroic orders can be greatly enhanced. Second, the miniaturization trend in conventional electronics is approaching the limits beyond which the reduction of the electronic element is becoming more and more difficult. One way to continue the current trends in computer power and storage increase, without further size reduction, is to use multi-functional materials that would enable new device capabilities. Here, we review the field of multi-ferroic (MF) and magnetoelectric (ME) materials, putting the emphasis on electronic effects at ME interfaces and MF tunnel junctions.

show abstract

“…In order to resolve this problem, the MTJ with an artificial antiferromagnetic (AAF) layer, which consists of two ferromagnetic layers separated by an ultrathin nonmagnetic spacer, has been proposed [3]. The interlayer exchange coupling between the two ferromagnetic layers is oscillatory [4], and a strong antiferromagnetic coupling can be obtained by adjusting the thickness of the nonmagnetic layer in the middle. attracted much attention because of the strong exchange-bias interaction [5] and thermal magnetic stability [6].…”

Section: Introductionmentioning

confidence: 99%

Rotation of the Pinned Direction in Artificial Antiferromagnetic Tunnel Junctions by Field Annealing

et al. 2004

View full text Add to dashboard Cite

The effect of field annealing on the magnetic tunnel junctions (MTJs) with an artificial antiferromagnetic layer is investigated. Samples, which were grown under the same condition, are annealed with low (200-Oe) and high (1-kOe) magnetic fields. The rotation of the pinned direction is observed for the sample annealed at high magnetic field without decrease of tunneling magnetoresistance by varying the applied field direction. This result provides a method to adjust the pinned direction of the MTJ, which may be critical in switching a magnetic RAM (MRAM) cell.Index Terms-Artificial anitferromagnetic (AAF) layer, field annealing, magnetic tunnel junction (MTJ), tunneling magnetoresistance (TMR).

show abstract

Interlayer Exchange Coupling

Cited by 40 publications

References 162 publications

Interlayer Exchange Coupling in Asymmetric Co−Fe/Ru/Co−Fe Trilayers Investigated with Broadband Temperature-Dependent Ferromagnetic Resonance

Interlayer Exchange Coupling in Asymmetric Co−Fe/Ru/Co−Fe Trilayers Investigated with Broadband Temperature-Dependent Ferromagnetic Resonance

Multi-ferroic and magnetoelectric materials and interfaces

Rotation of the Pinned Direction in Artificial Antiferromagnetic Tunnel Junctions by Field Annealing

Contact Info

Product

Resources

About