Interlayer Exchange Coupling in Semiconductor EuS-PbS Ferromagnetic Wedge Multilayers

Kowalczyk, L.; Wrotek, S.; Dziawa, P.; Osinniy, V.; Szot, M.; Story, T.; Sipatov, A. Yu.; Volobuev, Valentine V.; Fedorov, A. I.

doi:10.12693/aphyspola.110.225

Cited by 2 publications

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References 13 publications

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“…We consider the case of multilayers with relatively thick SrS nonmagnetic spacer (45Å and thicker) to deal with the system of ferromagnetic EuS layers magnetically decoupled from each other. The effect of antiferromagnetic interlayer coupling between EuS layers via nonmagnetic spacer, discovered in closely related in EuS-PbS multilayers with PbS spacer [3][4][5][6], was also found in EuS-SrS multilayers with ultrathin SrS spacer layer (below 10Å). The EuS-SrS multilayers with ultrathin spacer exhibiting interlayer exchange effects will be discussed in other publication.…”

Section: Introductionmentioning

confidence: 67%

Magnetic Properties of EuS-SrS Semiconductor Multilayer Structures

et al. 2007

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Magnetic and structural properties of EuS-SrS semiconductor multilayers were studied by SQUID and magneto-optical Kerr effect magnetometry techniques and by X-ray diffraction method. The multilayers composed of monocrystalline, lattice matched ferromagnetic EuS layers (thickness 35-50Å) and nonmagnetic SrS spacer layers (thickness 45-100Å) were grown epitaxially on KCl (001) substrates with PbS buffer layer. Ferromagnetic transition in EuS-SrS multilayers was found at the Curie temperature Tc = 17 K. The multilayers exhibit only weak in-plane magnetic anisotropy with [110] easy magnetization axis. Coercive field of EuS-SrS multilayers shows a linear increase with decreasing temperature. Magneto-optical mapping of magnetic hysteresis loops of the multilayers revealed good spatial homogeneity of their magnetic properties.

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Section: Introductionmentioning

confidence: 67%

Magnetic Properties of EuS-SrS Semiconductor Multilayer Structures

et al. 2007

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Magnetization Studies of Antiferromagnetic Interlayer Coupling in EuS-SrS Semiconductor Multilayers

et al. 2013

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Temperature and magnetic eld dependence of magnetization of EuSSrS multilayers grown epitaxially on KCl (001) substrate is experimentally studied by superconducting magnetometry technique. In these lattice-matched semiconductor heterostructures EuS layers are ferromagnetic quantum wells whereas SrS layers are nonmagnetic spacer barriers. The multilayers composed of EuS layers with thickness 3.55 nm and SrS layers (thickness 0.5 10 nm) exhibit ferromagnetic transition at 17 K. In the multilayers with ultrathin SrS spacers (0.51 nm) a nonmonotonic temperature dependence of magnetization as well as a characteristic switching in magnetic hysteresis loops is observed. These experimental ndings are explained considering antiferromagnetic interlayer coupling between ferromagnetic EuS layers via nonmagnetic SrS spacers. The strength of this coupling is determined based on model magnetization calculations.

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Interlayer Exchange Coupling in Semiconductor EuS-PbS Ferromagnetic Wedge Multilayers

Cited by 2 publications

References 13 publications

Magnetic Properties of EuS-SrS Semiconductor Multilayer Structures

Magnetic Properties of EuS-SrS Semiconductor Multilayer Structures

Magnetization Studies of Antiferromagnetic Interlayer Coupling in EuS-SrS Semiconductor Multilayers

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