Interlayer Transition in a vdW Heterostructure toward Ultrahigh Detectivity Shortwave Infrared Photodetectors

Qi, Tailei; Gong, Yue; Li, Alei; Ma, Xiaoming; Wang, Peipei; Huang, Rui; Liu, Chang; Sakidja, Ridwan; Wu, Judy; Chen, Rui; Zhang, Liyuan

doi:10.1002/adfm.201905687

Cited by 69 publications

(67 citation statements)

References 56 publications

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“…In 2019, Qi et al. [ 73 ] presented a photodetector with ultrahigh D * (beyond 10 12 Jones) in short‐wave IR spectrum. The excellent properties are attributed to the type‐II band alignment of this vdWHs.…”

Section: Photodetectors Based On Heterostructuresmentioning

confidence: 99%

Recent Advances in 2D Materials for Photodetectors

Jiang

Wen

Wang

et al. 2021

Adv Elect Materials

125

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Photodetection technology has been systematically studied due to wide practical applications in temperature monitoring, thermal image technology, and light communication systems. To date, photodetectors based on multitudes of 2D materials have been reported because of their excellent performance. On account of their novel physical properties with ultrathin thickness, cost‐effective preparation with mechanical transfer process, natural passivated surface without dangling bonds, various bandgaps corresponding with a wide photoresponse, and so on, new 2D materials emerge to play significant roles in the field of photodetection. In this regard, a great advance has been achieved in terms of preparation and device application, especially in the last decade. However, there are still some challenges to obtain high‐performance photodetectors, such as growing high‐quality 2D materials, achieving higher quantum efficiency, effectively separating the photogenerated electron–hole pairs, and so on. In this review, the recent development of the state‐of‐the‐art photodetection composed of 2D materials is summarized. Moreover, the key parameters and mechanisms in photodetectors are highlighted, and an overview on 2D materials and their heterostructures is provided. Finally, the strategies for improving the performance of photodetectors are also highlighted. The review will provide a guide to further practical applications in photodetection devices.

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Section: Photodetectors Based On Heterostructuresmentioning

confidence: 99%

Recent Advances in 2D Materials for Photodetectors

Jiang

Wen

Wang

et al. 2021

Adv Elect Materials

125

View full text Add to dashboard Cite

show abstract

“…[ 12–17 ] In general, 2D materials possess unique and unconventional properties such as strong light–matter interaction, tunable optical absorption, and outstanding carrier transport and thus, are expected to be one of the most potential substitute materials to compensate the limitation of traditional semiconductors. [ 18 ]…”

Section: Introductionmentioning

confidence: 99%

Band Alignment Engineering in Two‐Dimensional Transition Metal Dichalcogenide‐Based Heterostructures for Photodetectors

et al. 2020

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The hybridization of two‐dimensional transition metal dichalcogenides (2D TMDs) with other light‐sensitive materials to fabricate the TMD‐based heterostructures is an effective way to boost the overall photoelectric performance of photodetectors. In particular, the alignment of band structure at the interface of the binding materials plays a critical role in optimizing the carrier transfer path and prompting the charge separation rate, which finally lead to the simultaneous improvement of photoresponsivity and response rate and the expansion of detection range. However, the band alignment engineering topic has been barely summarized and reviewed in detail up to today. Herein, a specific review focused on the band alignment strategies and the related charge‐transfer mechanism of the recently developed novel TMD heterostructures for photodetectors is provided. The band structures are classified into four categories according to the targeted function of photodetectors, including that formed by TMDs with zero‐bandgap materials, narrow‐bandgap semiconductors, middle‐bandgap semiconductors, and wide‐bandgap semiconductors. The corresponding band alignment principles and charge‐transfer behaviors are summarized carefully by providing various latest research works as representative examples under each category. Herein, a key reference for applying and extending the fundamental band alignment principles in the design and fabrication of future TMD‐based heterostructural photodetectors is provided.

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“…6e). [147] The ideal band diagram of the GaTe/InSe interface indicates that the GaTe/InSe vdW heterostructures are expected in type-II band alignment, in which the interlayer transition energy of %0.55 eV lies in the SWIR light range of 1.0-1.55 μm beyond the cut-off wavelengths of the individual GaTe and InSe. These GaTe/InSe vdW heterostructure photodetectors show a high D* over a wide spectrum in UV-visible-SWIR light.…”

Section: D Atomic Layer Vdw Heterostructure Nanohybridsmentioning

confidence: 99%

“…[143][144][145] Figure 6d-e shows two IR detectors based on 2D TMD vdW heterostructures via the design of interfaces from constituent layers of uniquely selected electronic band structures. [146,147] Figure 6d shows a 2D p-MoTe 2 (E g : %1.0 eV)/graphene/n-SnS 2 (E g : %2.2 eV) p-g-n junction made by layer-by-layer stacking of different 2D nanosheets together. The insertion of graphene between the p-and n-layers has been found critical to interface quality for exciton dissociation and charge transport.…”

Section: D Atomic Layer Vdw Heterostructure Nanohybridsmentioning

confidence: 99%

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Nanohybrid Photodetectors

Gong

2021

Advanced Photonics Research

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Little imagination is needed to gauge the impact of lowdimensional nanostructures such as 0D quantum dots (QDs) and nanocrystals (NCs), [1][2][3][4] 1D nanowires (NWs) and nanotubes, [5,6] and 2D atomic sheets (graphene, MoS 2 , etc.). [7][8][9] With the exponential increase in the discovery of low-dimensional nanostructures, and in understanding how different and how peculiar the electrons behave when confined in the 0D, 1D, and 2D limits, an immediate next step is followed to use these low-dimensional nanostructures as "lego" pieces to build a variety of devices for electronic, photonic, and optoelectronic applications with functionality and performance unprecedented by, or better than that of, their counterparts based on conventional 3D materials. In such a quest, nanohybrids with regard to either heterostructures of the low-dimensional nanostructures, or their heterostructures with conventional materials (bulks, films, polymers, etc.), have emerged as an important class of nanomaterials for practical applications in electronic devices, photonic devices, optoelectronic devices, structural devices, medicine, sensors, etc. In fact, the past decade or so has witnessed exciting progress made in the research and development of nanohybrids, promoted particularly by the discovery of a large variety of 2D atomic materials including graphene, transition metal dichalcogenides (TMDCs), etc. [7][8][9] Despite differences in various nanohybrids stemming from different device requirements, all nanohybrids have one thing in common: the presence of heterojunction interfaces that play a critical role in the functionality and performance of the nanohybrids-based devices. This explains an intensive effort in recent research toward understanding and controlling such interfaces. Optoelectronic nanohybrids, such as QDs/graphene nanohybrids, present an excellent example. During the optoelectronic process of light absorption, exciton (or photogenerated electronhole pairs) dissociation into free charge carriers, charge transfer, and transport, the QD/graphene interface affects almost the entire process by providing the required band-edge offset for exciton dissociation and the electric field to drive the charge transfer. As the dimensions or at least one of the dimensions of the low-dimensional nanostructures approach from sub-nm to a few nm, the effect of such heterojunction interfaces on the nanohybrid properties becomes increasingly critical and controlling such interfaces must be at an atomic scale. This represents a major challenge toward achieving the anticipated nanohybrids' device performance, especially in practical applications that require wafer-scale synthesis, manipulation, and characterization of these atomically small, single-crystalline lowdimensional nanostructures. It should be noted that many excellent reviews or book chapters are available in literature covering the recent progress made in fabrication, characterization, and applications of nanohybrids. [8][9][10][11][12][13][14][15][16] Instead, this article intend...

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Interlayer Transition in a vdW Heterostructure toward Ultrahigh Detectivity Shortwave Infrared Photodetectors

Cited by 69 publications

References 56 publications

Recent Advances in 2D Materials for Photodetectors

Recent Advances in 2D Materials for Photodetectors

Band Alignment Engineering in Two‐Dimensional Transition Metal Dichalcogenide‐Based Heterostructures for Photodetectors

Nanohybrid Photodetectors

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