Intermediate gas phase precursors during plasma CVD of HMDSO

Plasma Polymer Deposition and Coatings on Polymers

“…The deposition of HMDSO-fed discharges is one example where the plasma chemical reaction pathway and the film-forming species seem to be known. Also in downstream or remote plasma operation, a reduction in deposition rate occurs, accompanied by reduced energy fluxes (45,46). By electron impact in the plasma, mainly hydrogen (C-H bond energy of 3.5 eV) or methyl groups (Si-C bond energy of 4.6 eV) are abstracted (39).…”

Growth Rate and Sensing Properties οf Plasma Deposited Silicon Organic Thin Films from Hexamethyldisilazane Compound

“…To explain this behavior of film thickness, we refer to the behavior of plasma characteristics presented in Table I. As reported in the literature [18][19][20][21][22], and without the presence of reactive molecular gas in the plasma (case S1), the electronic collisions with the precursor are mainly responsible of its fragmentation, whereas when nitrogen is present in the plasma phase, atomic nitrogen reacts with HMDSN in the gas phase, increasing its conversion and fragmentation, and it removes parts of the organic fraction of the film by means of gas-surface reactions [23]. The fact that the thickness of sample S1 is higher than sample S2 can be understood through the higher fragmentation of the precursor due to the higher electron density and the lower etching effect induced by UV photons.…”

Adhesion Improvement of Plasma‐Polymerized Maleic Anhydride Films on Gold Using HMDSO/O2 Adhesion Layers

“…The formation of SiO 2 ‐like coatings from HMDSO using plasma enhanced chemical vapor deposition processes has been known and investigated since the 1970's. As such, these coatings have found a wide spectrum of applications such as optical coatings, protective and barrier coatings, as well as for coatings for microelectronic and biomaterial applications 8–15. The deposition of SiO 2 ‐like films has been investigated with and without the presence of oxygen using a variety of process conditions and plasma reactors.…”