Intermetallic Layer Growth Kinetics in Sn‐Ag‐Cu System using Diffusion Multiple and Reflow Techniques

Abstract

A diffusion multiple (DM) technique was applied to the Sn-Ag-Cu ternary system with the aim to determine the kinetics of formation of Cu-Sn intermetallic compounds (IMCs) and to predict properties of the interface in the solder joints. The formation and growth of the Cu-Sn intermetallics at the interface between the Cu as a base material and Sn-Ag-(Cu) solder was additionally studied during a standard reflow soldering process. Based on the experimental data, the kinetic rate constants and the respective activation energies of the Cu-Sn IMCs in the temperature range between 150 and 200°C were calculated and compared with experimental data from the literature. In this way, the mechanism of the pure solid-state reaction (DM technique) and liquid phase reaction (reflow soldering) were studied. The limitations of DM techniques for the prediction of the IMCs growth during reflow soldering process are discussed as well.

Numerical and Experimental Investigations on the Growth of the Intermetallic Mg2Si Phase in Mg Infiltrated Si‐Foams

“…Volume diffusion usually results in a growth behavior, d / ffiffi t p , as reported in many references. [18,19] We will show that for a stoichiometric intermetallic phase, reaction leads to a linear growth behavior, d / t. For mixed modes of diffusion and reaction, the growth factor is between 1/2 and 1. This finding is contrary to the existing relation, [20,21] d / t n , n 1/2.…”