Intermixing of ordinary and anomalous Hall effect in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi>SrRuO</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:math>

Roy, Debangsu; Haham, Noam; Reiner, J. W.; Shimshoni, Efrat; Klein, Lior

doi:10.1103/physrevb.92.235101

Cited by 9 publications

(7 citation statements)

References 23 publications

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“…One such measurement, for the as deposited film B, shown in Fig. 1b, is suggestive of multiaxial magnetocrystalline anisotropy [29,33]. The easy axis of such strained thin films has a strong temperature-dependent angular variation with the film normal, leading to a complex magnetocrystalline anisotropy, as reported in earlier studies [33,38].…”

supporting

confidence: 73%

“…The material class of correlated oxides has garnered recent attention in the exploration of skyrmions [22,23] and exploiting the THE [24], particularly in the itinerant ferromagnet SrRuO 3 (SRO) [25][26][27]. Spin-orbit coupling has been exploited earlier, to the study of different emergent phenomena in SRO [28][29][30][31][32][33] and more recently to the study of the THE [25][26][27] in devices utilizing SRO interfaced or capped with SrIrO 3 (SIO) and ascribed to skyrmion textures. However, the understanding and origin of such magnetic textures that lead to the observation of THE is surprisingly lacking.…”

mentioning

confidence: 99%

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Robust skyrmion-bubble textures in SrRuO$_3$ thin films stabilized by magnetic anisotropy

Zhang,

Das,

Barts

et al. 2020

Preprint

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Topological spin textures in an itinerant ferromagnet, SrRuO3 is studied combining Hall transport measurements and numerical simulations. We observe characteristic signatures of the Topological Hall Effect associated with skyrmions. A relatively large thickness of our films and absence of heavymetal layers make the interfacial Dzyaloshinskii-Moriya interaction an unlikely source of these topological spin textures. Additionally, the transport anomalies exhibit an unprecedented robustness to magnetic field tilting and temperature. Our numerical simulations suggest that this unconventional behavior results from magnetic bubbles with skyrmion topology stabilized by magnetodipolar interactions in an unexpected region of parameter space.

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supporting

confidence: 73%

mentioning

confidence: 99%

Robust skyrmion-bubble textures in SrRuO$_3$ thin films stabilized by magnetic anisotropy

Zhang,

Das,

Barts

et al. 2020

Preprint

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“…ρ(5 K) reduced from around 131.0 µΩcm for t ≈ 1.2 nm to around 2.5 µΩcm for t ≈ 28.5 nm. Figure6(d) plots the Hall resistivity ρ xy versus magnetic field for different t values at 80 K. A typical hysteresis loop appeared in the ρ xy -H for all SRO films with different t values, providing a further evidence for the ferromagnetism in the SRO films[8].…”

mentioning

confidence: 79%

“…The growth of SRO in thin-film form may open up possibilities to further tune its unusual physical properties by strain and finite-size effects. Extensive efforts have been carried out previously to grow high-crystalline SRO films on various substrates [1,[6][7][8][9],…”

Section: Introductionmentioning

confidence: 99%

“…In the past, SRO films grown using sintered oxide targets by sputtering or pulsed laser deposition showed relatively low RRRs (< 10) [19][20][21][22][23]. On the other hand, thick SRO films grown by electron beam evaporation technique turned out to give much higher RRR (> 60) [7,8] that is approaching the value in a bulk single crystal. Such a large difference in RRR suggests a high sensitivity of the SRO stoichiometry on growth parameters, where the volatility of ruthenium oxide and thus cation deficiency turn out to be a major problem [1,24].…”

Section: Introductionmentioning

confidence: 99%

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High-sensitivity of initial SrO growth on the residual resistivity in epitaxial thin films of SrRuO$_3$ on SrTiO$_3$ (001)

Kar,

Singh,

Yang

et al. 2021

Preprint

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The growth of SrRuO 3 (SRO) thin film with high-crystallinity and low residual resistivity (RR) is essential to explore its intrinsic properties. Here, utilizing the adsorption-controlled growth technique, the growth condition of initial SrO layer on TiO 2 -terminated SrTiO 3 (STO) (001) substrate was found to be crucial for achieving a low RR in the resulting SRO film grown afterward. The optimized initial SrO layer shows a c(2 × 2) superstructure that was characterized by electron diffraction, and a series of SRO films with different thicknesses (ts) were then grown. The resulting SRO films exhibit excellent crystallinity with orthorhombic-phase down to t ≈ 4.3 nm, which was confirmed by high resolution X-ray measurements. From X-ray azimuthal scan across SRO orthorhombic (02±1) reflection, we uncover four structural domains with a dominant domain of orthorhombic SRO [001] along cubic STO [010] direction. The dominant domain population depends on t, STO miscut angle (α), and miscut direction (β), giving a volume fraction of about 92 % for t ≈ 26.6 nm and (α, β) ≈ (0.14 o , 5 o ). On the other hand, metallic and ferromagnetic properties were well preserved down to t ≈ 1.2 nm. Residual resistivity ratio (RRR = ρ(300K)/ρ(5K)) reduces from 77.1 for t ≈ 28.5 nm to 2.5 for t ≈ 1.2 nm, while ρ(5K) increases from 2.5 µΩcm for t ≈ 28.5 nm to 131.0 µΩcm for t ≈ 1.2 nm. The ferromagnetic onset temperature (T ′ c ) of around 151 K remains nearly unchanged down to t ≈ 9.0 nm and decreases to 90 K for t ≈ 1.2 nm. Our finding thus provides a practical guideline to achieve high crystallinity and low RR in ultra-thin SRO films by simply adjusting the growth of initial SrO layer.

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Topological Signatures in the Hall Effect of SrRuO₃/La_0.7Sr_0.3MnO₃ SLs

Ziese

Bern

Esquinazi

et al. 2019

Physica Status Solidi (b)

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Noncollinear spin textures such as skyrmions lead to a novel Hall effect contribution called the topological Hall effect. In recent years, research has focused on the Weyl metal SrRuO3 with topological signatures reported for SrRuO3 layers adjacent to layers with strong spin–orbit coupling. However, SrRuO3 films are known to be prone to structural modifications when interfaced with different materials. In this work the Hall effect of SrRuO3/La0.7Sr0.3MnO3 superlattices (SLs) is correlated with structural and magnetic information to study whether a topological Hall effect is induced by interfacing to ferromagnetic layers. High‐quality SLs with ultrathin layers are fabricated by pulsed laser deposition on SrTiO3 substrates. The symmetry of the SrRuO3 layers is studied by angular magnetoresistance measurements and the magnetocrystalline anisotropy by magnetization measurements. Two SLs are compared in detail, both with 8 unit cell thick SrRuO3 layers, but with La0.7Sr0.3MnO3 layers 2 and 4 unit cell thick. Only the sample with 2 unit cell thick manganite layers shows features resembling a topological Hall effect. Depending on the La0.7Sr0.3MnO3 layer thickness the SrRuO3 crystalline symmetry is orthorhombic or tetragonal. The results indicate that the topological Hall effect features arise from an intricate interplay between magnetocrystalline anisotropy and antiferromagnetic interlayer coupling.

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Intermixing of ordinary and anomalous Hall effect inSrRuO3

Cited by 9 publications

References 23 publications

Robust skyrmion-bubble textures in SrRuO$_3$ thin films stabilized by magnetic anisotropy

Robust skyrmion-bubble textures in SrRuO$_3$ thin films stabilized by magnetic anisotropy

High-sensitivity of initial SrO growth on the residual resistivity in epitaxial thin films of SrRuO$_3$ on SrTiO$_3$ (001)

Topological Signatures in the Hall Effect of SrRuO₃/La_0.7Sr_0.3MnO₃ SLs

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Intermixing of ordinary and anomalous Hall effect inSrRuO3

Cited by 9 publications

References 23 publications

Robust skyrmion-bubble textures in SrRuO$_3$ thin films stabilized by magnetic anisotropy

Robust skyrmion-bubble textures in SrRuO$_3$ thin films stabilized by magnetic anisotropy

High-sensitivity of initial SrO growth on the residual resistivity in epitaxial thin films of SrRuO$_3$ on SrTiO$_3$ (001)

Topological Signatures in the Hall Effect of SrRuO3/La0.7Sr0.3MnO3 SLs

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Topological Signatures in the Hall Effect of SrRuO₃/La_0.7Sr_0.3MnO₃ SLs