Intermodulation of transverse magnetoresistance oscillations in structures with strong intersubband interaction

Abstract

In the Shubnikov-de Haas oscillation spectrum of doped InAs/AlSb structures, high-amplitude peaks are established at combination frequencies. It is demonstrated that they are caused by a significant contribution of intersubband scattering to the processes of electron-electron interaction.Keywords: two-dimensional electron gas, intra-and intersubband interaction of electrons, amplitude and frequency modulation of the Shubnikov-de Haas oscillations.

Modeling of the scattering mechanisms of a two-dimensional Fermi electron gas in the heterostructure InAs/AlSb/InAs

“…To confirm this assumption, let us present graphs of the dependences of the amplitude of the Shubnikov-de Haas oscillations on the inverse magnetic field [9,10]. The heterostructure AlSb( -Te)/InAs/( -Te)AlSb dynamics broadening of quantization depends on the scattering frequency DEG roughness heterojunction InAs/AlSb which is most intensively implemented at sites 1 and 2 (Fig.…”

“…To solve the problem of taking into account the shielding effect, we use the first-order perturbation theory in the framework of the screening Lindhardt and expand on the potential of wave function where V is the volume studied structure generally and is the potential. By definition, the Fourier component k � −k is determined via the integral of the form (11) In linear approximation, induced charge is given by [9] where f k is the Fermi-Dirac equilibrium function. We introduce the replacement: q =k � −k,Q = (k � +k)∕2− which are the difference and the sum of the pulses, respectively.…”