Internal Friction and Creep-Recovery in Indium

Abstract

Using low-stress pseudoshear deformation, we measured the ambient-temperaturecreep-recovery behavior of polycrystalline indium. The &+J diagram shows three regions with increasing stress: stress exponents of 1.05, 7.4, and 2.0. The diagram resembles remarkably the dislocation-velocity-shear-stressdiagrams reported for various materials by many authors, who interpreted the diagrams by dislocation dynamics. Applying an extended Burgers model (two Kelvin-Voigt elements) gave for the three regions the following relaxation times z2 and .c3 (in seconds):(1) 11, 123; (2) 10, 132; (3) 12, 154. Thus, z, is nearly stress independent, and .c2 increases with increasing stress. Laplaceantransformation of our ~( t )measurements to get the retardation-time distribution function g(In z) indicates in all three regions a strong peak near .c2 = 3 s and a weaker, broader peak near 23 = 150 s. These agree surprisingly well with the Burgers dashpot-spring-model results. We analyzed the recovery part of the strain ~( t ) to obtain e-lcf) curves.

Electrochemo‐Mechanical Stresses and Their Measurements in Sulfide‐Based All‐Solid‐State Batteries: A Review

“…where k represents the sensitivity coefficient; R represents the resistance of the metal strain gauge; ΔR represents the change in resistance; L represents the length of the strain gauge; ΔL represents the change in the length of the strain gauge. .4 [69] LiNi 0.33 Co 0.33 Mn 0.33 O 2 199.0 0.25 78 132.6 [70] LiFePO 4 117.8 0.30 45.5 98.2 [71] LiMn 2 O 4 194.0 0.26 77.0 134.7 [34c] α-S 8 12.8 0.23 5.2 8 [72] Li 2 S 76.62 0.18 32.35 39.9 [73] TiS 2 (1T) a) 228 0.11 102 97.4 [74] MoS 2 (2H) a) 230 0.3 88 191.7 [74] Sulfide SSEs β-Li 3 PS 4 29.5 0.29 11.4 23.3 [75] 75Li 2 S-25P 2 S 5 23 0.32 8.7 21 [76] Li 7 P 3 S 11 21.9 0.35 8.1 23.9 [75] Li 10 GeP 2 S 12 21.7 0.37 7.9 27.3 [75] Li 6 PS 5 Cl 22.1 0.37 8.1 28.7 [75] Li 6 PS 5 Br 25.3 0.35 9.3 29.0 [75] Li 6 PS 5 I 30.3 0.33 11.3 29.9 [75] Anode materials Li 4.9 0.42 4.2 11.0 [77] In 12.6 0.45 4.4 42.2 [78] Si 96.0 0.29 62.0 90.0 [79] Sn 50.5 0.34 21.1 54.4 [80] Li 13 Sn 5 48.7 0.21 24.4 33.3 [80] Li 2.25 Al 62.4 0.21 -- [34c] LTO 181.0 0.25 73.1 125.1 [81] Graphite 32.0 0.31 12.0 28.1 [63] a) 2H and 1T represent trigonal prismatic coordination and octahedral coordination configuration, respectively.…”

Self-organized spatio-temporal micropatterning in ferromagnetic Co–In films

“…Therefore, the obtained results make sense considering that In metal is recognized as a very ductile element due to its low Young's modulus. 29 In fact, a value of E r ¼ 3.3 GPa is obtained when the indentation is performed on the free-patterned area made of almost pure In. The lm with 90 at% Co shows the largest H (7.00 GPa) and E r (151.3 Ga).…”

Spontaneous formation of spiral-like patterns with distinct periodic physical properties by confined electrodeposition of Co-In disks

“…Owing to the different mechanical properties of hcp/fcc-Co (with average Young’s modulus around 210 GPa in non-porous bulk form ref. 52 ), and In (Young’s modulus around 12.5 GPa 53 ), the chemical patterning on the surface of the microdisks can explain the variations in the elastic modulus ( Fig. 5e ) and indentation depth ( Fig.…”