Internal Quantum Efficiency Enhancement by Relieving Compressive Stress of GaN-Based LED

Lin, Yow−Jon; Liu, Wei Chih; Chang, Che-Ming; Chung, Ching-Che; Chen, Yan Hao; Chung, Te Yuan; Liu, Cheng Yi

doi:10.1109/lpt.2014.2329857

Cited by 8 publications

(2 citation statements)

References 13 publications

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“…Moreover, GaN has gained much attention due to its potential applications in series of devices such as LEDs, short wavelength emitters or detectors, high power and high frequency electronic devices [47][48][49]. GaN based LEDs are widely applied in color displays, traffic lights, and solid state lighting [50][51][52]. GaN based semiconductors are highly promising for the fabrication of electronic devices including high electron mobility transistors [53], heterojunction bipolar transistors [54], UV Schottky barrier photodetectors (PDs) [55], and metal semiconductor metal (MSM) PD [56].…”

Section: Gan Propertiesmentioning

confidence: 99%

Review of GaN/ZnO Hybrid Structures Based Materials and Devices

Nahhas¹

2018

NANO

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This paper presents a review of recent advances of Gallium Nitride (GaN) and Zinc Oxide (ZnO) based hybrid structures materials and devices. GaN and ZnO have gained substantial interest in the research area of wide bandgap semiconductors due to their unique electrical, optical and structural properties. GaN and ZnO are important semiconductor materials with applications in blue and ultraviolet (UV) optoelectronics. Both materials have similar physical properties. GaN and ZnO as hybrid material have received much attention due to their unique potential applications. Several potential optical applications are being fabricated based on GaN and ZnO hybrid materials such as optical wave guide, light emitting diodes (LEDs), and laser diodes (LDs). The recent aspects of GaN and ZnO hybrid based devices are presented and discussed.

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Section: Gan Propertiesmentioning

confidence: 99%

Review of GaN/ZnO Hybrid Structures Based Materials and Devices

Nahhas¹

2018

NANO

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“…Later in 1991, Nakamura [6,7] used the Two-flow Metalorganic Chemical Vapor Deposition (TF-MOCVD) growth method to substantially increase the quality of MBE crystals, and successfully produced the first blue LED with a luminance of 1000 mcd in 1993 [8]. This breakthrough pushed the value of GaN to a new level [9,10]. Not only does GaN have the advantage of being a direct band gap material, it can be used with InN (2.0 eV) and AlN (6.2 eV) to form ternary and quaternary compounds and extend its direct band gap range to 1.95 -6.2 eV with the corresponding wavelength extensions from the green frequency range to that of ultraviolet frequencies, allowing it to be used for expanded applications.…”

Section: Introductionmentioning

confidence: 99%

ESD-Reliability Analysis and Strategy of the GaN-Based Light-Emitting Diodes

Chen

Chang

Shih

et al. 2015

KEM

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Compounds such as GaN, ZnSe, and SiC are the compounds that currently hold the most potential in developing blue light-emitting diodes (LEDs) and blue laser diodes (LDs). Speaking of the physical property, the gallium nitride belongs to a direct bandgap material with an obviously super luminous efficiency; therefore, the gallium nitride has the dominate tendency than that of others materials. Although the gallium nitride has excellent physical properties, but in actually it is suffered many challenges during the manufacture process. Especially, it is extremely sensitive to the electrostatic discharge (ESD) threat. In other words GaN diodes generally exhibit very low anti-ESD capabilities when in HBM, MM reversed bias modes. These LEDs in the MM stress situation, its ESD immunity level usually is only about 50-V extremely low anti-ESD ability. Therefore, in this paper, GaN LED DUTs will be stressed and investigated under HBM and MM pulses bombardments, and the aim of this work is to describe a detailed investigation of the factors that limit the robustness of GaN-based LEDs under ESD transient events; finally they will provide some countermeasures in ESD reliability consideration.

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Implementation of light extraction improvements of GaN-based light-emitting diodes with specific textured sidewalls

Chen

Chang

et al. 2018

Optics & Laser Technology

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Internal Quantum Efficiency Enhancement by Relieving Compressive Stress of GaN-Based LED

Cited by 8 publications

References 13 publications

Review of GaN/ZnO Hybrid Structures Based Materials and Devices

Review of GaN/ZnO Hybrid Structures Based Materials and Devices

ESD-Reliability Analysis and Strategy of the GaN-Based Light-Emitting Diodes

Implementation of light extraction improvements of GaN-based light-emitting diodes with specific textured sidewalls

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