Internal stress analysis in diamond films formed by d.c. plasma chemical vapour deposition

Wang, Wanlu; Liao, Kejun; Gao, Jinying; Liu, Aimin

doi:10.1016/0040-6090(92)90433-c

Cited by 85 publications

(13 citation statements)

References 18 publications

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“…Evaluation of macroscopic compressive and tensile stresses through x-ray diffraction ͑XRD͒ analyses or Raman scattering was already reported in thin diamond films. [1][2][3][4][5][6][7] First, stresses can be generated at the grain boundaries. In that case, ͑i͒ compressive stress has been shown to be due either to the difference in thermal expansion coefficients between diamond and Si substrate 1,2 or to nondiamond carbon impurities at the grain boundaries, 4,8 and ͑ii͒ intrinsic tensile residual stresses have been shown to be due to the presence of a high grain boundary density.…”

Section: Macroscopic Residual Stress In Chemical-vapor-deposition Frementioning

confidence: 99%

Macroscopic residual stress in chemical-vapor-deposition free-standing diamond films by x-ray diffraction analyses

Durand¹,

Olivier²,

Bisaro³

et al. 1999

Applied Physics Letters

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We present a structural analysis of plasma-assisted chemical-vapor-deposition self-supporting diamond films with different qualities, black, gray and white. Experimental results show a weak fiber texture and a large average grain size at the growth side, consistent with the model usually used to described chemical-vapor-deposition growth with a preferred orientation of the grains. Macroscopic residual stresses have been determined by means of x-ray measurements, through the “sin2 ψ” method. Compressive and tensile stresses are reported at both faces of the samples. We show that stresses present at both growth face and nucleation face cannot be explained by the usual models involving the average grain size. For some samples, a closer analysis of the sin2 ψ curves reveals a shift from the linear behavior. This effect comes from various stress states and/or lattice parameters between the grains belonging to the texture and the randomly oriented grains.

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Section: Macroscopic Residual Stress In Chemical-vapor-deposition Frementioning

confidence: 99%

Macroscopic residual stress in chemical-vapor-deposition free-standing diamond films by x-ray diffraction analyses

Durand¹,

Olivier²,

Bisaro³

et al. 1999

Applied Physics Letters

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“…As reported by Wang et al, 32 the diamond grain size increases with growth thickness, leading to a reduction in the compressive stresses. This is in agreement with our data for the three groups of films.…”

Section: Residual Stress Analysis In Chemical-vapor-deposition Diamonmentioning

confidence: 62%

“…Grain boundaries are sources of tensile stresses. 6,8,32 We estimate that the decrease function of nondiamond carbon impurities ͑compressive stress source͒ is steeper than the change in the grain boundary density ͑tensile stress source͒ through the film thickness. This would explain the observed stress gradients where the internal stresses change from compressive to tensile when approaching the surface.…”

Section: Residual Stress Analysis In Chemical-vapor-deposition Diamonmentioning

confidence: 99%

Residual stress analysis in chemical-vapor-deposition diamond films

Liu

Pinto

Brito

et al. 2009

Applied Physics Letters

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“…42 indicated a decrease in compressive stress with increasing grain size. Deposition of diamond film by plasma CVD technique (discussed later) would also culminate in additional inclusion of defects which may in turn add to the already existing mechanical stress due to the grain boundaries.…”

Section: Introductionmentioning

confidence: 95%

“…A high compressive stress in diamond film has been reported by many workers. 42 • 43 A comprehensive model was developed by Maity et a/. 44 for the determination of strain and stress along with microhardness of polycrystalline diamond thin films from the "below band gap" optical absorption data.…”

Section: Introductionmentioning

confidence: 99%