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Diamond thin films are very important industrial materials. This is because diamond thin films have extreme hardness, insulating strength, and excellent thermal conductivity and are transparent over a wide range of wavelengths etc. Now, diamond films have been prepared by several methods such as hot filament chemical vapour deposition [l], radio frequency plasma CVD [2], mirowave plasma CVD [3,41, electron assisted CVD [5,6], dc plasma CVD [7], dc plasma jet CVD [8], arc discharge CVD [9], etc. In addition, Hirose et al.[lo, 111 first reported growth of diamond films using an oxygen-acetylene flame in the atmosphere with growth rates approaching 100 pm/h. Combustion flame is one of the most promising methods in the growth techniques of diamond thin films because the flame deposition process is simple, fast, and inexpensive. However, in most cases, there was a temperature gradient across the substrate surface from an oxygen-acetylene flame which is blowing perpendicularly against the substrate. This was measured to be as much as 150 to 200°C from the center to the edge of the substrate [12]. Therefore, the growth rate decreased with increasing radial distance away from the center of the substrate, and this temperature gradient also led to changes in the morphology of the growth across the surface of the substrate. In this note, diamond thin films were grown on silicon substrate in ambient atmosphere with a heating-assisted oxygen-acetylene flame, and the film properties were examined. The experimental results have shown that diamond thin films have an excellent homogeneity from the center to the edge of the substrate surface.