“…Diamond films are in fact rarely epitaxial with the substrate, except when grown on bulk diamond. However, evidence of heteroepitaxial growth of diamond on substrates with similar cell parameters (e.g., BeO, 2 Si, [3][4][5] Ni, 6 Cu, 7 c-BN, 8-14 β-SiC 15,16 ) has been obtained.…”
Section: Introductionmentioning
confidence: 99%
“…Diamond films are in fact rarely epitaxial with the substrate, except when grown on bulk diamond. However, evidence of heteroepitaxial growth of diamond on substrates with similar cell parameters (e.g., BeO, Si, − Ni, Cu, c-BN, − β-SiC , ) has been obtained. 1 Illustration of the template used in the calculations of the diamond nucleation stabilization energy.…”
The effect of CH 3 and Na on diamond nucleation on hexagonal boron nitride (h-BN) was investigated theoretically by using the DFT method. The methyl and sodium species were used as substituents on zigzag edge atoms of the basal plane. Outgrowths corresponding to diamond nuclei were calculated to be energetically more stable than the corresponding growth of graphite nuclei for both types of substituents. Only small energy differences were obtained for diamond nucleation on Na and CH 3 substituted h-BN edges, respectively.
“…Diamond films are in fact rarely epitaxial with the substrate, except when grown on bulk diamond. However, evidence of heteroepitaxial growth of diamond on substrates with similar cell parameters (e.g., BeO, 2 Si, [3][4][5] Ni, 6 Cu, 7 c-BN, 8-14 β-SiC 15,16 ) has been obtained.…”
Section: Introductionmentioning
confidence: 99%
“…Diamond films are in fact rarely epitaxial with the substrate, except when grown on bulk diamond. However, evidence of heteroepitaxial growth of diamond on substrates with similar cell parameters (e.g., BeO, Si, − Ni, Cu, c-BN, − β-SiC , ) has been obtained. 1 Illustration of the template used in the calculations of the diamond nucleation stabilization energy.…”
The effect of CH 3 and Na on diamond nucleation on hexagonal boron nitride (h-BN) was investigated theoretically by using the DFT method. The methyl and sodium species were used as substituents on zigzag edge atoms of the basal plane. Outgrowths corresponding to diamond nuclei were calculated to be energetically more stable than the corresponding growth of graphite nuclei for both types of substituents. Only small energy differences were obtained for diamond nucleation on Na and CH 3 substituted h-BN edges, respectively.
Modern thin film sensor technology imposes stringent demands upon material quality, highly qualified downstream process technologies, device performance and integrity. Since the earliest stages of its development, crystalline thin film diamond has been promoted as a semiconductor material for high power, high frequency or high temperature electronics. These predictions have been based largely on early experiments made with small single crystal stones. As the properties of thin film diamond are beginning to match up with those of single crystal diamond the real scope for diamond in electronics is being realised. This paper reviews some of the developments made in thin film diamond sensors at AEA Technology. The development of chemical vapour deposition processes for manufacturing wafer scale insulating and doped semiconducting diamond are reviewed. The development of downstream process technologies such as device delineation and contact technology are discussed. Finally some demonstration devices are presented which illustrate the material issues that have arisen in diamond sensor technology and its potential. ~ ~ ') Didcot, Oxfordshire OX11 ORA, U.K.
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