Internal stress and structure of ultrahigh vacuum evaporated chromium and iron films and their dependence on substrate temperature and oxygen partial pressure during deposition

Thurner, G.; Abermann, R.

doi:10.1016/0040-6090(90)90072-l

Cited by 93 publications

(30 citation statements)

References 16 publications

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“…This kinetic trapping process should rapidly become more important as homologous deposition temperature is reduced, both due to the exponentially increasing trapping probability, and due to decreasing relaxation rates. However, it is not clear that this is borne out in experiments [29,30].…”

Section: Other Mechanismsmentioning

confidence: 99%

The dynamic competition between stress generation and relaxation mechanisms during coalescence of Volmer–Weber thin films

Floro

Hearne

Hunter

et al. 2001

Journal of Applied Physics

343

206

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Real-time measurements of stress evolution during the deposition of VolmerWeber thin films reveal a complex interplay between mechanisms for stress generation and stress relaxation. We observed a generic stress evolution from compressive to tensile, then back to compressive stress as the film thickened, in amorphous and polycrystalline Ge and Si, as well as in polycrystall;ne Ag, Al, and Ti. Direct measurements of stress relaxation during growth interrupts demonstrate that the generic behavior can occur even in the absence of stress relaxation. When relaxation did occur, the mechanism depended sensitively on whether the film was continuous or discontinuous, on the process conditions, and on the fildsubstrate interracial strength.For Ag films, interracial shear dominated the early relaxation behnavior, whereas this mechanism was negligible in Al films due to the much stronger bonding at the A1/SiOz interface. For amorphous Ge, selective relaxation of tensile stress was observed only at elevated temperatures, consistent with surface-diffusion-based mechanisms. In "all the films studied here, stress relaxation was suppressed after the films became continuous...

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Section: Other Mechanismsmentioning

confidence: 99%

The dynamic competition between stress generation and relaxation mechanisms during coalescence of Volmer–Weber thin films

Floro

Hearne

Hunter

et al. 2001

Journal of Applied Physics

343

206

View full text Add to dashboard Cite

show abstract

“…In situ wafer curvature experiments 1 measure substrate curvature during growth and, from this, calculate the film stress-thickness product or the film stress; such experiments show that the film stress evolves in a similar manner for many different materials undergoing VW growth. [2][3][4][5][6][7][8][9][10] At the early stage ͑island nucleation/growth͒, compressive film stresses are observed. As islands impinge upon each other, film stress becomes tensile.…”

Section: Introductionmentioning

confidence: 99%

“…When the film becomes continuous, the film stress can be either tensile or compressive depending on atomic mobility. Tensile stress is commonly observed when atomic mobility is low, [2][3][4] whereas it is compressive when the mobility is high. [5][6][7][8] During the final stage of VW growth, film stress changes are observed during growth interrupt experiments wherein deposition is temporarily stopped and then resumed.…”

Section: Introductionmentioning

confidence: 99%

Atomistic simulations of stress and microstructure evolution during polycrystalline Ni film growth

et al. 2009

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Film stress and microstructure evolution during the growth of a Ni bicrystal film are investigated by molecular dynamics simulations. The nominal surface orientation of the growing film was ͑111͒ and the grain boundaries are ⌺79 symmetrical tilt grain boundaries. The growth mode is layer by layer; two-dimensional ͑2D͒ islands nucleate on the surface, grow, and coalesce into complete layers. Grain-boundary migration near the free surface is observed as boundaries are dragged by step edges of growing 2D islands. Simulations show that the film stress-thickness product is compressive and oscillatory with a period that is approximately equal to one monolayer. Adatoms are observed to incorporate into grain boundaries and exert compressive strain on neighboring grains. Theoretical modeling demonstrates incorporated atoms are a primary source of the observed compressive stress during growth and gives predictions in very good agreement with simulation results. The oscillatory stress-thickness product is shown to be related to atoms diffusing into the grain boundary from the surface and out of the grain boundary onto the surface.

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“…4,12,13 Even for refractory materials such as Ti and Cr that grow with much smaller island sizes (e.g., w= 5 nm yields a predicted stress of almost 9 GPa), the maximum measured tensile stress is only about 1 GPa. 14,15 For comparison with results later in the article, a uniaxial strain geometry is also considered and modeled as a semi-infinite slab of width w as shown in Fig. 1(b).…”

Section: Introductionmentioning

confidence: 99%

Modeling metallic island coalescence stress via adhesive contact between surfaces

et al. 2006

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PACS number(s): 68.35.Np, 61.50.Lt, 71.15.Pd Tensile stress generation associated with island coalescence is almost universally observed in thin films that grow via the Volmer-Weber mode. The commonly accepted mechanism for the origin of this tensile stress is a process driven by the reduction in surface energy at the expense of the strain energy associated with the deformation of coalescing islands during grain boundary formation. In the present work, we have performed molecular statics calculations using an embedded atom interatomic potential to obtain a functional form of the interfacial energy vs distance between two closely spaced free surfaces. The sum of interfacial energy plus strain energy provides a measure of the total system energy as a function of island separation. Depending on the initial separation between islands, we find that in cases where coalescence is thermodynamically favored, gap closure can occur either spontaneously or be kinetically limited due to an energetic barrier. Atomistic simulations of island coalescence using conjugate gradient energy minimization calculations agree well with the predicted stress as a function of island size from our model of spontaneous coalescence. Molecular dynamics simulations of island coalescence demonstrate that only modest barriers to coalescence can be overcome at room temperature. A comparison with thermally activated coalescence results at room temperature reveals that existing coalescence models significantly overestimate the magnitude of the stress resulting from island coalescence.2

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Internal stress and structure of ultrahigh vacuum evaporated chromium and iron films and their dependence on substrate temperature and oxygen partial pressure during deposition

Cited by 93 publications

References 16 publications

The dynamic competition between stress generation and relaxation mechanisms during coalescence of Volmer–Weber thin films

The dynamic competition between stress generation and relaxation mechanisms during coalescence of Volmer–Weber thin films

Atomistic simulations of stress and microstructure evolution during polycrystalline Ni film growth

Modeling metallic island coalescence stress via adhesive contact between surfaces

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