The atomic structure of amorphous hydrogenated carbon-nitrogen films was studied by electron energy loss spectroscopy ͑EELS͒. The films were deposited onto Si͑100͒ substrates by rf plasma decomposition of CH 4 -NH 3 and CH 4 -N 2 mixtures, with substrates placed on the powered electrode of a diode glow-discharge system. The sp 2 fraction of C and N atoms as a function of the nitrogen content in the films was obtained by EELS analysis. An increase of the carbon sp 2 fraction with increasing fraction of NH 3 and N 2 feed gases was observed. The variation in the atomic structure of the a-C͑N͒:H thin films is correlated to the internal compressive stress. © 1996 American Institute of Physics. ͓S0003-6951͑96͒01319-8͔In the last few years there has been an increasing interest in the study of nitrogen incorporation into hard amorphous hydrogenated carbon ͑a-C:H͒ films. Research into the search for the proposed -C 3 N 4 phase, which is predicted to be harder than diamond was initiated by Liu and Cohen. 1 As a result of nitrogen incorporation into carbon films it was found that both optical and electrical properties, 2-4 as well as their mechanical properties 5-7 can be modified. Particularly with respect to the mechanical properties, it was found that nitrogen incorporation results in a substantial reduction of the compressive internal stress of the films. The improvement in adhesion that resulted from the stress reduction has made it possible to use amorphous hydrogenated carbonnitrogen ͓a-C͑N͒:H͔ films as antireflective coatings in Ge based IR sensors. 7 One of the key factors in determining the structure and properties of hard amorphous carbon films is the hybridization state of the atoms that form the amorphous network. 8 Previous results on a-C͑N͒:H films 9 allude to an increase in the graphitic clustering (sp 2 bonding͒ upon nitrogen incorporation, which may be correlated to the observed internal stress reduction. 5 A similar reduction in stress is observed for highly tetrahedral C:N films 10,11 in which nitrogen incorporation above 1 at. % resulted in both stress reduction and increase in the sp 2 carbon fraction.All of the above-cited deposition studies on a-C͑N͒:H films are based on addition of N 2 to the deposition atmosphere, in the deposition of the a-C films. To date, few researchers have studied the use of ammonia as the source gas for nitrogen. 12,13 Contrary to the above research, Seth et al. 12 reported an increase in the sp 3 carbon atoms fraction upon nitrogen incorporation in a-C͑N͒:H films deposited by PECVD in C 4 H 6 -NH 3 atmospheres. In order to clarify the role of the nitrogen precursor gas on the structure and properties of a-C͑N͒:H films, we report a study on the influence of the precursor gases NH 3 and N 2 in the determination of they hybridization state of carbon and nitrogen atoms in a-C͑N͒:H films, as a function of the nitrogen content. The compressive internal stress was also measured and correlated with the other results.The a-C͑N͒:H films were produced by plasma decomposition of CH 4...