Interplay between Carrier and Impurity Concentrations in Annealed<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mi>Ga</mml:mi><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:msub><mml:mi>Mn</mml:mi><mml:mi>x</mml:mi></mml:msub><mml:mi>As</mml:mi></mml:math>: Intrinsic Anomalous Hall Effect

Chun, Seung‐Hyun; Kim, Y. S.; Choi, Hyung Kook; Jeong, Ina; Lee, W. O.; Suh, Kyung-Duck; Oh, Yoon Seok; Kim, K. H.; Khim, Z. G.; Woo, J.C.; Park, Y. D.

doi:10.1103/physrevlett.98.026601

Cited by 51 publications

(16 citation statements)

References 46 publications

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“…For B Ͼ 0.5 T, the AHE saturates because of the saturation of magnetization. 35,36 To ascertain the origins of AHE, we examine the scaling relationship xy ϰ xx n at 20 K for a series of Ge 1−x Mn x Te. The field dependencies of the R H curves are in good agreement with the M-H curves obtained by SQUID for both samples.…”

Section: Resultsmentioning

confidence: 99%

Optical, magnetic, and transport behaviors of Ge1−xMnxTe ferromagnetic semiconductors grown by molecular-beam epitaxy

Chen

Lim

Sim

et al. 2008

Journal of Applied Physics

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The optical, magnetic, and transport behaviors of Ge1−xMnxTe (x=0.24 and 0.55) grown by solid-source molecular-beam epitaxy are investigated. X-ray diffraction shows that Ge1−xMnxTe crystallizes in rocksalt structure. The temperature-dependent magnetization (M-T) for x=0.55 sample gives a Curie paramagnetic temperature of θp∼180 K, which is consistent with the temperature-dependent resistivity ρ(T) measurement. Anomalous Hall effect is clearly observed in the samples and can be attributed to extrinsic skew scattering based on the scaling relationship of ρxy∝ρxx1.06. The magnetoresistance of Ge1−xMnxTe is isotropic and displays a clear hysterestic loop at low temperature, which resembles that of giant-magnetoresistance granular system in solids.

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Section: Resultsmentioning

confidence: 99%

Optical, magnetic, and transport behaviors of Ge1−xMnxTe ferromagnetic semiconductors grown by molecular-beam epitaxy

Chen

Lim

Sim

et al. 2008

Journal of Applied Physics

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“…The anomalous Hall coefficient R A is proportional to R xx n , where n depends on the mechanism giving rise to the anomalous Hall resistance [24,25]. Experimentally, it is typically found that n2 in highly doped, lightly compensated (Ga,Mn)As films [5,8,26], while n1 has been reported for highly compensated samples [8,26].…”

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High Curie temperatures at low compensation in the ferromagnetic semiconductor (Ga,Mn)As

et al. 2013

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We investigate the relationship between the Curie temperature T C and the carrier density p in the ferromagnetic semiconductor (Ga,Mn)As. Carrier densities are extracted from analysis of the Hall resistance at low temperatures and high magnetic fields. Results are found to be consistent with ion channeling measurements when performed on the same samples. We find that both T C and the electrical conductivity increase monotonically with increasing p, and take their largest values when p is comparable to the concentration of substitutional Mn acceptors. This is inconsistent with models in which the Fermi level is located within a narrow isolated impurity band.The III-V semiconductor (Ga,Mn)As is one of the most widely studied diluted magnetic materials exhibiting carrier-mediated ferromagnetism. Such systems are characterized by strong coupling between spin, charge and lattice degrees of freedom that may be modified by, for example, piezoelectrically applied stress or local electric fields [1]. (Ga,Mn)As also shows large anomalous magnetotransport effects that provide a 'built-in' sensor of the local magnetization orientation [1,2,3]. In particular, the anomalous Hall resistance (R xy AH ) is proportional to the perpendicular-to-plane component of the magnetization, and offers a sensitive means of probing magnetization and domain wall dynamics in (Ga,Mn)As thin films [3]. On the other hand, the large magnitude of R xy AH has hampered the determination of the carrier density, p, which is a crucial parameter for establishing a theoretical description of (Ga,Mn)As. R xy AH is typically 10-100 times larger than the ordinary Hall resistance, R xy OH , and depends in a non-trivial way on various scattering mechanisms which contribute to the

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“…4 In this context magnetotransport measurements on Ga 1−x Mn x As-and especially the anomalous Hall effect ͑AHE͒-have played a major role in clarifying these issues. [5][6][7][8] While most efforts for identifying the mechanisms of conduction-impurity band with weak localization 9,10 versus true disordered metal with delocalized holes 11,12 -have so far been focused on Ga 1−x Mn x As with high Mn concentrations, 13 relatively little attention has been given to the case of insulating samples, where impurity band conduction is certain to occur. 14 In this work we have carried out AHE measurements on Ga 1−x Mn x As epilayers with low Mn concentration ͑x = 0.014͒ in high magnetic fields ͑up to 18.0 T͒, where aligning all Mn spins along the field direction makes it possible to extract the ordinary Hall coefficient from the Hall data.…”

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confidence: 99%

Scaling of the anomalous Hall effect in low Mn concentration (Ga,Mn)As

Shen

Liu

et al. 2008

Journal of Applied Physics

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Interplay between Carrier and Impurity Concentrations in AnnealedGa1−xMnxAs: Intrinsic Anomalous Hall Effect

Cited by 51 publications

References 46 publications

Optical, magnetic, and transport behaviors of Ge1−xMnxTe ferromagnetic semiconductors grown by molecular-beam epitaxy

Optical, magnetic, and transport behaviors of Ge1−xMnxTe ferromagnetic semiconductors grown by molecular-beam epitaxy

High Curie temperatures at low compensation in the ferromagnetic semiconductor (Ga,Mn)As

Scaling of the anomalous Hall effect in low Mn concentration (Ga,Mn)As

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