Interplay between variable direct current sputtering deposition process parameters and properties of ZnO:Ga thin films

Ferdaous, Mohammad Tanvirul; Shahahmadi, Seyed Ahmad; Sapeli, M. M.I.; Chelvanathan, Puvaneswaran; Akhtaruzzaman, Md.; Tiong, Sieh Kiong; Amin, Nowshad

doi:10.1016/j.tsf.2018.06.005

Cited by 14 publications

(4 citation statements)

References 40 publications

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“…The radio frequency power, sputtering pressure and temperature, and substrate to target distance are some of the main parameters. The main advantages of the sputtering technique are to get uniform and pinhole-free thin film with deposition of a large surface area [ 93 , 94 ]. Figure 6 shows a general schematic diagram of an RF-DC magnetron sputtering system.…”

Section: Major Fabrication Techniques For Ihtmmentioning

confidence: 99%

Roles of Inorganic Oxide Based HTMs towards Highly Efficient and Long-Term Stable PSC—A Review

et al. 2022

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In just a few years, the efficiency of perovskite-based solar cells (PSCs) has risen to 25.8%, making them competitive with current commercial technology. Due to the inherent advantage of perovskite thin films that can be fabricated using simple solution techniques at low temperatures, PSCs are regarded as one of the most important low-cost and mass-production prospects. The lack of stability, on the other hand, is one of the major barriers to PSC commercialization. The goal of this review is to highlight the most important aspects of recent improvements in PSCs, such as structural modification and fabrication procedures, which have resulted in increased device stability. The role of different types of hole transport layers (HTL) and the evolution of inorganic HTL including their fabrication techniques have been reviewed in detail in this review. We eloquently emphasized the variables that are critical for the successful commercialization of perovskite devices in the final section. To enhance perovskite solar cell commercialization, we also aimed to obtain insight into the operational stability of PSCs, as well as practical information on how to increase their stability through rational materials and device fabrication.

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Section: Major Fabrication Techniques For Ihtmmentioning

confidence: 99%

Roles of Inorganic Oxide Based HTMs towards Highly Efficient and Long-Term Stable PSC—A Review

et al. 2022

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“…Increasing the sputtering power can effectively improve the crystallinity of NiO film [30]. There is an optimal sputtering power where the ZnO-based thin film has optimal transparency and resistivity [31][32][33]. Adjusting the sputtering power can induce changes in the optical and electrical properties of CdO thin films [34].…”

Section: Introductionmentioning

confidence: 99%

Effect of the Sputtering Power on the Structure, Morphology and Magnetic Properties of Fe Films

Zhou

Wei

et al. 2020

Metals

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In this paper, the radio frequency (RF) magnetron sputtering (MS) method was utilized to fabricate multiple sets of the iron film samples under different sputtering powers. With the help of X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and vibrating sample magnetometer (VSM), how the sputtering power affected the structure, morphology and magnetic properties of the iron film was studied. XRD results showed that all Fe films have a polycrystalline bcc structure and (110) preferred orientation. According to the Bragg equation calculation, the larger the sputtering power, the larger the average grain size, which is consistent with the results of AFM particle size analysis. The main reason is that the sputtering power affects the grain growth mode. As the sputtering power increases, it gradually changes from a small island-like growth to a thick columnar growth. However, from the surface morphology and height profile, we saw that the iron film deposited under 230 W had the most uniform grain size distribution and the grain size was relatively small. This is why thin films deposited under this condition have the best soft magnetic properties. The saturation magnetization (Ms) reaches 1566 emu/cm3, coercivity (Hc) is 112 Oe, and squareness ratio (Mr/Ms) is 0.40. Therefore, iron film prepared under 230 W has good comprehensive properties (highest Ms, lower Hc and Mr/Ms) that provide an experimental basis for further thin film research work.

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“…The primary benefits of RF sputtering include the production of thin films that are pinhole-free, have uniform thickness, and can be deposited over a large surface area. In this process, the properties of thin films primarily depend on the substrate temperature, sputtering pressure, RF power, system geometry, and the distance between substrate and target [16][17][18][19]. Most previous studies had focused on the doping of metal on NiO by sol-gel or chemical precipitation methods but reports on the deposition of chromium (Cr)-doped NiO by RF magnetron sputtering are rare.…”

Section: Introductionmentioning

confidence: 99%

Effect of Selective Lateral Chromium Doping by RF Magnetron Sputtering on the Structural, and Opto-Electrical Properties of Nickel Oxide

et al. 2021

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In this study, chromium (Cr)-doped nickel oxide (NiO) thin films were deposited by employing selective lateral doping of Cr in NiO by radio-frequency magnetron sputtering at different doping times ranging from 0 s (undoped) to 80 s. The structural, optical, and electrical properties of the resulting Cr-doped NiO thin films were investigated. Structural investigation from XRD patterns indicated that the grown Cr-doped NiO layer crystallized in a cubic phase. Broadening of the diffraction peak with increasing doping time from 0 s to 80 s led to a reduction in the crystallite size that varied from 23.52 nm to 14.65 nm. Compared with the undoped NiO, the diffraction peak along the (200) plane shifted from left to right as a function of doping time. This result indicated that Cr+3 could easily enter the NiO lattice. Results from the Hall-effect study disclosed that electrical properties of Cr-doped NiO was highly dependent on doping time. The conductivity of NiO was increased with doping time, and the highest conductivity (8.73 × 10−2 Scm−1) was achieved at a doping time of 80 s. Finally, optical investigations revealed that as doping time increased, the optical bandgap of Cr-doped NiO films dropped from 3.43 eV to 3.28 eV. The highest Urbach energy at higher doping time indicated that crystallinity became poorer, and the degree of defects increased with increasing doping time.

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Interplay between variable direct current sputtering deposition process parameters and properties of ZnO:Ga thin films

Cited by 14 publications

References 40 publications

Roles of Inorganic Oxide Based HTMs towards Highly Efficient and Long-Term Stable PSC—A Review

Roles of Inorganic Oxide Based HTMs towards Highly Efficient and Long-Term Stable PSC—A Review

Effect of the Sputtering Power on the Structure, Morphology and Magnetic Properties of Fe Films

Effect of Selective Lateral Chromium Doping by RF Magnetron Sputtering on the Structural, and Opto-Electrical Properties of Nickel Oxide

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