Interpolymer complexes of poly(acrylic acid) and poly(ethylene glycol) for low dishing in STI CMP

Seo, Jihoon; Moon, Jiho; Moon, San; Paik, Ungyu

doi:10.1016/j.apsusc.2015.06.078

Cited by 18 publications

(14 citation statements)

References 27 publications

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“…In addition, the broad peaks between 3080 and 3250 cm − 1 are ascribed to the terminal N‐H bands at the defect positions of the aromatic rings, such as NH and/or NH 2 groups . For PAA, the strong peak at 1695 cm − 1 is ascribed to C=O of the COOH groups, while the broad peak at 2800–3400 cm − 1 corresponds to ‐OH stretching mode of COOH . After PAA was added into the g‐C 3 N 4 nanosheets, the broad peak corresponding to the ‐OH groups in the mixture shifted to a lower wavenumber compared with that in the PAA (Figure b), which was highlighted by the dash line.…”

Section: Resultsmentioning

confidence: 99%

Enhanced water flux through graphitic carbon nitride nanosheets membrane by incorporating polyacrylic acid

et al. 2018

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Membranes assembled from two-dimensional (2-D) layered materials have shown potential use in water purification. Recently, a 2-D graphitic carbon nitride (g-C 3 N 4 ) nanosheets membrane exhibits considerable separation performance in water purification. In this study, to further improve this water separation performance, polyacrylic acid (PAA) was introduced to tune the nanochannels formed between the g-C 3 N 4 nanosheets. The fabricated g-C 3 N 4 -PAA hybrid membranes possessed higher water flux without sacrificing much rejection rate compared with that of the g-C 3 N 4 membrane; however, noticeable fouling was observed upon addition of the PAA into the membrane composite structure. In addition, the effect of PAA on the morphology, surface hydrophilicity, separation performance, and antifouling properties of the g-C 3 N 4 membrane were examined in detail. Overall, incorporating PAA into the g-C 3 N 4 nanosheets membrane was an effective and convenient method to improve the water separation performance, which could promote the application of the 2-D g-C 3 N 4 nanosheets membrane in practical ultrafiltration processes.

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Section: Resultsmentioning

confidence: 99%

Enhanced water flux through graphitic carbon nitride nanosheets membrane by incorporating polyacrylic acid

et al. 2018

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“…They proposed that picolinic acid covers the ceria abrasive surface and helps with the attachment of ceria particles to the pad, which helps in the reduction of step height. Later, Seo et al 107 investigated the effect of adding both PAA and poly (ethylene glycol) (PEG) to ceria based slurries at pH 5 to polish patterned wafers with 100 micron wide lines at various pattern densities (37.5% to 75%) and showed that the combination enhanced selectivity and reduced dishing. Without the additives, the selectivity was moderate (∼56) and the dishing was approximately 800 Å and 200 Å, respectively, for lines with a pattern density of 37.5% and 75%, and were reduced to about 600 Å and 100 Å, respectively, in the presence of 0.8 wt% PAA and 0.3 wt% PEG.…”

Section: Cmp Of Patterned Sti Structuresmentioning

confidence: 99%

Shallow Trench Isolation Chemical Mechanical Planarization: A Review

Ramanathan

Dandu

Babu

2015

ECS J. Solid State Sci. Technol.

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Electrical isolation of the billion or so active components in each integrated device is achieved using shallow trench isolation (STI) which requires chemical mechanical planarization (CMP) involving silicon dioxide removal at a high rate and stopping on an underlying silicon nitride film. Several colloidal slurries with various additives can yield the desired high rate selectivity between the oxide and nitride films during CMP while maintaining an acceptably low nitride rate. Here, many of such high selectivity STI CMP slurries described in the literature are reviewed along with the characteristics of the colloidal dispersions like the abrasives, additives, the interactions between them and with the films being planarized and the associated pH range in which the high selectivity is observed. The mechanisms proposed to explain the high reactivity of ceria with oxide, the role of additives in suppressing the nitride removal rate and resulting high selectivity are discussed. Reduction of a multitude of defects in post-CMP processed STI structures still remains an important challenge, especially as the feature sizes continue to shrink. Chemical mechanical planarization (CMP) is one of the important enabling processes in facilitating multilevel metallization (in some cases reaching up to 14 levels) and incorporation of novel gate and channel materials at the component level in modern semiconductor device manufacturing where its use has become widespread and ubiquitous.1-6 Here, we review recent advances and remaining challenges in one specific application of CMP, the shallow trench isolation (STI) process. STI is a method of electrically isolating active areas using trenches created in the Si substrate around the active elements and filling it with an insulating dielectric, such as silicon dioxide or silicon oxy-nitride or silicon carbonitride.7-11 Process details of the STI structures are available in numerous publications. There are a multitude of techniques available for oxide deposition and even though the resulting oxides have very different properties, for simplicity we do not distinguish between them in this review. For completeness and ease of reference, a schematic representation of the STI process is given in Figure 1. While the trenches are being filled, silicon dioxide also deposits over unwanted areas on the entire wafer (since selective deposition in trenches only is not possible) creating an uneven topography. The excess and unwanted oxide has to be completely removed and CMP has proven to be the only viable and robust global and local planarization capable process technology.Here, as shown in Figure 1, presence of a very thin silicon nitride stop layer (deposited on another thin pad oxide layer to control film stress) is an essential and integral part of the process. This nitride stop layer prevents any damage during planarization to the all-important epitaxially grown surface underneath and is itself removed by a wet etch process subsequent to the overburden oxide removal. Since the integrity of the...

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“…Park et al investigated the effect of adding both PAA and poly(vinyl pyrrolidone) (PVP) to ceria based slurries to achieve the multi-selectivity between SiO 2 , Si 3 N 4 , and poly-Si films and showed high selectivity (∼65:∼15:1 for SiO 2 :Si 3 N 4 :poly-Si films) in the presence of 0.05 wt% PAA and 0.2 wt% PVP in the pH range of 6.0-6.5 [94]. Seo et al proposed the PAA-poly(ethylene glycol) (PEG) "interpolymer complexes" as a passivation agent for high selectivity with low dishing and reported that the cross-linked network structure of interpolymer complexes significantly reduced dishing by preventing abrasives from polishing oxide in the trenches [95].…”

Section: Adsorption Behavior and Mechanism Of Passivation Agents On Filmsmentioning

confidence: 99%

A review on chemical and mechanical phenomena at the wafer interface during chemical mechanical planarization

Seo

2021

Journal of Materials Research

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As the minimum feature size of integrated circuit elements has shrunk below 7 nm, chemical mechanical planarization (CMP) technology has grown by leaps and bounds over the past several decades. There has been a growing interest in understanding the fundamental science and technology of CMP, which has continued to lag behind advances in technology. This review paper provides a comprehensive overview of various chemical and mechanical phenomena such as contact mechanics, lubrication models, chemical reaction that occur between slurry components and films being polished, electrochemical reactions, adsorption behavior and mechanism, temperature effects, and the complex interactions occurring at the wafer interface during polishing. It also provides important insights into new strategies and novel concepts for next‐generation CMP slurries. Finally, the challenges and future research directions related to the chemical and mechanical process and slurry chemistry are highlighted.

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Interpolymer complexes of poly(acrylic acid) and poly(ethylene glycol) for low dishing in STI CMP

Cited by 18 publications

References 27 publications

Enhanced water flux through graphitic carbon nitride nanosheets membrane by incorporating polyacrylic acid

Enhanced water flux through graphitic carbon nitride nanosheets membrane by incorporating polyacrylic acid

Shallow Trench Isolation Chemical Mechanical Planarization: A Review

A review on chemical and mechanical phenomena at the wafer interface during chemical mechanical planarization

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