Interpretation of Switching Properties of InGaSe₂Single Crystal

Abstract

The goal of this paper is to present experimental results of the switching eect and analyze qualitatively the inuence of various factors, such as temperature, light illumination and sample thickness on switching behavior of the high quality ternary chalcogenide semiconductor InGaSe2. Current-controlled negative resistance of InGaSe2 single crystals has been observed for the rst time. It has been found that indium gallium diselenide single crystals exhibit bistable or memory switching. The switching process takes place with both polarities on the crystal and has symmetric shapes. Currentvoltage characteristics of AgInGaSe2Ag structures exhibit two distinct regions, high resistance OFF state and low-resistance ON state having negative dierential resistance. InGaSe2 is a ternary semiconductor exhibiting S-type IV characteristics. The specimen under test showed threshold switching with critical eld of the switching being 10 3 V/cm at room temperature.

Electrical and Switching Properties of TlBiSe2 Chalcogenide Compounds

“…In recent years, it has been observed that the switching effect is not only characteristic of these kind of materials but is also present in many crystalline materials, like binary semiconductor and ternary chalcogenide semiconductor compounds such as TlGaTe 2 , TlInSe 2 , TlInTe 2 and InGaSe 2 . [19][20][21][22] The switching effect plays an important role in technological applications such as information storage, power control devices, thermistors, oscillators, etc. 23 In this work, we present measurements of the electrical conductivity of TlBiSe 2 ternary crystals in the temperature range from 293 K to 373 K, and investigate the dominant conduction mechanism in the preswitching state of the sample.…”

Synthesis and Nanostructures of Metal Selenide Precursors for Cu(In,Ga)Se2 Thin‐Film Solar Cells

“…In addition, the present sonochemicalm ethod is more efficient than the solvothermal preparation of InSe at 180 8C. [20] The (In 0.68 Ga 0.32 )Se 1.81 (In-Ga-Se) powder showed an XRD pattern that wass imilar to that of the In 1.00 Se 1.86 precursor,i ndexed as the cubic or tetragonal structure [21,22] because of the broad peak near 2 q = 448.T he sonochemical synthesis incorporated gallium in the pristine InSe lattice and randomly distributed indium and gallium in the metal sites. The final product, Cu 1.00 (In 0.68 Ga 0.30 )Se 2.01 ,a lso exhibited approximately 90 % yield on the basis of the metalsa nd as maller cubic cell [a = 5.644(4) ] than In 1.00 Se 1.86 .U pon incorporation of Cu + and Ga 3 + cations,w hich have smaller ionic radii than In 3 + (Cu + : 91 pm, Ga 3 + :76pm, In 3 + :94pm), into the zincblende In-Se lattice, the bond length between the cation and anion decreased and the unit cell shrank.…”

“…The poor solubility of selenium strongly influenced the crystal structures of InSe, that is, hexagonal and cubic struc- (2) [a] The lattice parameters were calculated by least-square refinements. [20] The (In 0.68 Ga 0.32 )Se 1.81 (In-Ga-Se) powder showed an XRD pattern that wass imilar to that of the In 1.00 Se 1.86 precursor,i ndexed as the cubic or tetragonal structure [21,22] because of the broad peak near 2 q = 448.T he sonochemical synthesis incorporated gallium in the pristine InSe lattice and randomly distributed indium and gallium in the metal sites. [19] Dissolutiono fs eleniumat1 10 8Cb yultrasound treatment produced cubic-phase InSe.…”

Negative Resistance and Memory Effects in TlInSeS Single Crystals

“…We can also observe that TlInSeS is a quaternary semiconductor exhibiting S-type I-V characteristics, similar to the curves shown by many authors. [13][14][15][16][17][18] 3.2 Temperature dependence of I-V characteristics The temperature dependence of the I-V characteristics is an important factor in choosing a switching material for an information-storage application. In the present study, the effect of the temperature on the I-V characteristics and the switching behaviour of the TlInSeS compound have been investigated in the temperature range from 173 to 303 K under static conditions, as shown in Fig.…”