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The goal of this paper is to present experimental results of the switching eect and analyze qualitatively the inuence of various factors, such as temperature, light illumination and sample thickness on switching behavior of the high quality ternary chalcogenide semiconductor InGaSe2. Current-controlled negative resistance of InGaSe2 single crystals has been observed for the rst time. It has been found that indium gallium diselenide single crystals exhibit bistable or memory switching. The switching process takes place with both polarities on the crystal and has symmetric shapes. Currentvoltage characteristics of AgInGaSe2Ag structures exhibit two distinct regions, high resistance OFF state and low-resistance ON state having negative dierential resistance. InGaSe2 is a ternary semiconductor exhibiting S-type IV characteristics. The specimen under test showed threshold switching with critical eld of the switching being 10 3 V/cm at room temperature.

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