Fabrication and electrical characterization of CdO/p-Si photosensors

Orainy, R.H. Al; Hendi, A.A.

doi:10.1016/j.mee.2014.02.014

Cited by 41 publications

(11 citation statements)

References 32 publications

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“…However, the I-V characteristics of the 5% PCBM doped device immediately bent at around 1.5 V forward bias and it has highest The obtained devices were characterized by I-V measurements for determining of the diode parameters such as ideality factor (n), barrier height (Ф ) and series resistance ( ) by various methods. According to the results, the I-V measurements show a non-linear attitude and this kind of characteristics is interpreted via thermionic emission (TE) model [65]. n and Ф can be acquired from I-V characteristics using TE model where the current (I) is given as the following equation [66]:…”

Section: Resultsmentioning

confidence: 99%

Effect of various PCBM doping on the interfacial layer of Al/PCBM:ZnO/p-Si photodiodes

Öztürk

2021

J Mater Sci: Mater Electron

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The light can be detected by various devices such as photoconductors, photodetectors, phototransistors, solar cells and photodiodes, and the light can be employed energy harvesting as well as sensing applications. Various materials can be utilized to raising of the efficiency of light-based devices. In present study, metalsemiconductor (MS) devices with various [6,6]-Phenyl C61-butyric acid methyl ester (PCBM) doped zinc oxide (ZnO) interfacial layer were fabricated for photodiode applications. Commercially purchased PCBM and ZnO were mixed in order to obtain undoped, 3%, 5%, and 10% PCBM doped ZnO interfacial layer for Al/PCBM:ZnO/p-Si devices. The obtained solutions were layered on the p-type silicon (p-Si) substrades by spin coating method. The thermal evaporation technique was utilized to deposit Al metal electrodes both back and front sides. The morphological properties of the fabricated devices were characterized by AFM. The morphological images of the AFM revealed that PCBM doping affected the surface morphology as well as surface roughness of the ZnO layers. I-V measurements were carried out in the dark and under varying illumination conditions for electrical properties. The devices exhibited good rectifying properties at around 10 3 rates, both dark and various illumination conditions, according to I-V graphs. The junction parameters of the produced devices were determined by using thermionic emission, Norde, and Cheung models from the I-V characteristics of the devices. The devices have high ideality factors and these values generally fluctuate with varying PCBM doping amounts. The current transient measurements show that PCBM doping provide increasing in the light response capacity. According to the results, the devices can be employed as photodiode and photodetector applications for the further works in the industry.

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Section: Resultsmentioning

confidence: 99%

Effect of various PCBM doping on the interfacial layer of Al/PCBM:ZnO/p-Si photodiodes

Öztürk

2021

J Mater Sci: Mater Electron

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“…Bu durum ince film tabakasının sahip olduğu kristal yapıyla ilgilidir. Yine doğrultma oranı değerleri Au/coumarin doped Bi2O3/p-Si/Al fotodiyotu için 28×10 3 , Au/coumarin-doped TiO2/p-Si fotodiyotu için ise 1×10 5 olarak bulunmuştur [41,45]. Doğrultma oranı değerleri araştırılan tüm fotodiyotlar için Rr > 1000 olduğundan iyi doğrultucu özelliğe sahip oldukları söylenebilir [75,76].…”

Section: Fotodiyotların Elektronik Parametrelerinin Karşılaştırılmasıunclassified

“…Ara yüz durumları diyot parametrelerinden kapasiteyi önemli ölçüde etkilemektedir [58]. Bulunan tüm değerler 10 12 ile 10 13 arasındadır [2,3,11,41]. Farklı çalışmalarda devre elemanlarının Dit değerlerinin frekans ve katkılamadan önemli ölçüde etkilendiği anlaşıldı.…”

Section: Fotodiyotların Elektronik Parametrelerinin Karşılaştırılmasıunclassified

“…Elde edilen elektriksel ve optik karakterizayon verileri Au/Coumarin katkılı Bi2O3/p-Si/Al diyotunun optik devre elemanı ve fotodiyot olarak çalıştırılabileceğini göstermiştir [45]. [3].…”

Section: çEşitli Fotodiyotlarla İlgili Yapılan Literatür Araştırmasıunclassified

“…Yeşil enerji olarak da bilinen bu enerji temiz, ucuz, kendini yenileyebilen ve fosil yakıt alternatifi enerji olarak kendisini göstermektedir [2]. CdO, ZnO ve TiO2 gibi yarı iletken metal oksitlerle üretilmiş şeffaf iletken oksit malzemeler (TCO), elektriksel, optik ve fotovoltaik özelliklerinden ötürü yenilenebilir enerji üretimi için önemli bir adaydır [3]. Çeşitli optoelektronik devre elemanlarının çevresel sorunlarla ve enerji çıkmazlarıyla başa çıkabileceği öngörülmektedir [4,5].…”

Section: Introductionunclassified

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Analysis of The Electrical Characteristics of Photodiodes Produced by Dopping Various Metal Oxides

Aslan

Esen

Yakuphanoğlu

2020

International Journal of Innovative Engineering Applications

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Review paperIn this study, the studies made in the last 10 years about the devices produced by using different metal oxide nano powders were discussed extensively. The effects of the dopping on the electrical properties of photodiodes and photodetectors were investigated. The I-V characteristics of the devices performed under different light intensities were analyzed. In addition, the comparison of electronic parameters such as ideality factor (n), barrier height (Фb), series resistance (Rs) and interface state density (Dit) of the thin films produced was investigated. The effect of these parameters on devices is emphasized. In addition, it was investigated to what extent the optoelectronic properties of devices are compatible with the current literature.

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Photoresponse and photocapacitor properties of Au/AZO/p-Si/Al diode with AZO film prepared by pulsed laser deposition (PLD) method

et al. 2016

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Fabrication and electrical characterization of CdO/p-Si photosensors

Cited by 41 publications

References 32 publications

Effect of various PCBM doping on the interfacial layer of Al/PCBM:ZnO/p-Si photodiodes

Effect of various PCBM doping on the interfacial layer of Al/PCBM:ZnO/p-Si photodiodes

Analysis of The Electrical Characteristics of Photodiodes Produced by Dopping Various Metal Oxides

Photoresponse and photocapacitor properties of Au/AZO/p-Si/Al diode with AZO film prepared by pulsed laser deposition (PLD) method

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