Thallium Selenide single crystals were prepared by a special design using Rridgmantechnique constructed by the authors. An investigation was made on the influence of temperature on the electrical conductivity and Hall effect in two crystallographic directions. The anisotropic properties were checked, and the anisotropic factor was observed t o increase with temperature decrease. The energy gap as well as the ionization energy was calculated. The conductivity throughout the entire temperature range was found t o be of p-type. The Hall mobilities derived from these measurements at room temperature were of the order p~~ = 4 2 . 6 6 cmZ/vs and ,UH,~ = 112.2 cmz/vs.

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Growth and Characterization of Single Crystals of the Ternary Compound TIGaTe,The electrical conductivity and the Hall effect for TlGaTe, crystals have been measured over a wide temperature range. The crystal used for our study was grown by the Bridgman technique and possessed p-type conductivity. The energy gap has been found to be 0.84 eV, whereas the ionization energy has the value 0.25 eV. The variation of the Hall mobility as well as the carrier concentration with temperature was investigated. The scattering mechanism of the carrier in the whole temperature range of investigation was checked.

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The preparation and electrical properties of thallium monosulphide single crystals are reported in the present work. Measurements of electrical conductivity and Hall coefficient were performed over the temperature range 215-415 K. The study was carried out with the current flowing parallel to the c axis and the magnetic field direction perpendicular to the c axis. The crystals obtained had p-type conductivity with a hole concentration of 1.18 x 1 0 ' " ~m -~ at room temperature. Conductivity and Hall mobility at 300K were evaluated as 5.01 X Q-' cm-' and 2511.89 cm2 V I S -] respectively. The energy-gap width was found to be 1.37 eV. An anomalous behaviour of the temperature dependence of Hall mobility was noticed.