On the preparation and electrical properties of thallium selenide monocrystals

Abstract

Thallium Selenide single crystals were prepared by a special design using Rridgmantechnique constructed by the authors. An investigation was made on the influence of temperature on the electrical conductivity and Hall effect in two crystallographic directions. The anisotropic properties were checked, and the anisotropic factor was observed t o increase with temperature decrease. The energy gap as well as the ionization energy was calculated. The conductivity throughout the entire temperature range was found t o be of p-type. The Hall mobilities derived from these measurements at room temperature were of the order p~~ = 4 2 . 6 6 cmZ/vs and ,UH,~ = 112.2 cmz/vs.

Properties of Tl4Se3S single crystals and characterization of Ag/Tl4Se3S Schottky barrier diodes

“…The values of the room temperature electrical resistivity, carrier concentration (p ¼ ðeR h Þ À1 ) and Hall mobility (l exp ¼ ðpeqÞ À1 ) were found to be 6.20 Â 10 3 Xcm, 1.16 Â 10 12 cm À3 and 873 cm 2 V À1 s À1 , respectively. The value of the resistivity is close to that reported for TlSe crystals (1.15 Â 10 3 Xcm) [20]. The obtained value is less than that reported for TlS as 2.0 Â 10 5 (Xcm) [3] indicating that the replacement of Se by S atoms significantly affects the electrical properties.…”

“…The obtained value is less than that reported for TlS as 2.0 Â 10 5 (Xcm) [3] indicating that the replacement of Se by S atoms significantly affects the electrical properties. The room temperature hole concentration and Hall mobility are reported as 1.18 Â 10 10 cm À3 and 2454.7 cm 2 V À1 s À1 [3] and as 4.96 Â 10 16 cm À3 and 112.2 cm 2 V À1 s À1 [20] for TlS and TlSe, respectively. The difference between these published data and [2].…”

Preparation and Switching Behavior Characterization of Some Quaternary Thallium Chalcogenide Compounds

“…Details of the experimental procedure for crystal growth were reported elsewhere [11]. The resulting ingots had no cracks and voids on the surface.…”

Negative-differential-resistance effects in TlInTe2 ternary semiconductor

“…Afterwards, the ampoule was cooled down slowly in the third zone of the furnaces. Details of the experimental equipment for crystal growth and of preparation procedures are described elsewhere [22].…”