Growth and Characterization of Ternary Compound TiGaTe2 Single Crystals

Study of trapping and recombination centres in Tl2InGaTe4chain crystals by dark electrical conductivity and photoconductivity measurements

“…The value of E d ¼ 0.30 eV, calculated by using equation (2) (figure 1), is comparable to that reported as 0.34 and 0.28 eV for TlInTe 2 [8,11] and as 0.27 eV for TlGaTe 2 crystals [5]. The donor energy level of 0.30 eV, being less than (E g /2), indicates the domination of conduction by impurity carriers and confirms the extrinsic type of conduction in the crystals below 210 K. This impurity level was probably created by sample inhomogeneities present in the chain structure of the crystal.…”

“…99 TlInTe 2 and TlGaTe 2 , respectively [2,5]. Consistently, the electrical conductivity measurements revealed the intrinsic conductive behaviour of both crystals, with energy band gaps of 0.80 and 0.85 eV respectively, as determined from temperaturedependent conductivity [5][6][7]. The electrical behaviour of these compounds exhibits many nonlinear effects, such as S-type characteristics with voltage oscillations in the negative-resistance region, and switching and memory effects [2][3][4].…”

“…In particular, the fundamental absorption edge is reported to be associated with indirect transitions having energies of 0.97-0. 99 TlInTe 2 and TlGaTe 2 , respectively [2,5]. Consistently, the electrical conductivity measurements revealed the intrinsic conductive behaviour of both crystals, with energy band gaps of 0.80 and 0.85 eV respectively, as determined from temperaturedependent conductivity [5][6][7].…”

“…Electrical and optical properties of TlInTe 2 and TlGaTe 2 crystals have been investigated [2][3][4][5][6][7][8][9][10][11]. In particular, the fundamental absorption edge is reported to be associated with indirect transitions having energies of 0.97-0.…”

New Technique for Crystal Growth and Phase Transition in TlInS2 Crystals

“…In 1983 it was observed that a PT occurs in TlGaSe2 [4]. The present author observed the presence of a PT in TlGaTez during the investigation of electrical conductivity [5]. Several papers discussed the presence of a PT in the TlInSz compound: Two structural phase transitions were observed [6] at 189 and 213 K in a study of the dielectric properties of TlInS2.…”