Growth and Characterization of Single Crystals of the Ternary Compound TlGaTe₂

Abstract

Growth and Characterization of Single Crystals of the Ternary Compound TIGaTe,The electrical conductivity and the Hall effect for TlGaTe, crystals have been measured over a wide temperature range. The crystal used for our study was grown by the Bridgman technique and possessed p-type conductivity. The energy gap has been found to be 0.84 eV, whereas the ionization energy has the value 0.25 eV. The variation of the Hall mobility as well as the carrier concentration with temperature was investigated. The scattering mechanism of the carrier in the whole temperature range of investigation was checked.

Transport and recombination kinetics in TlGaTe2 crystals

“…The value of the conductivity, being of the order of ∼10 −3 Ω cm −1 is lower than that reported for the same crystals, ∼3.33 × 10 −2 Ω cm −1 , in Ref. 1. The difference in the conductivity values may be attributed to the crystal defects and/or atomic vacancies that may have occurred during the crystal growth process.…”

“…The value of the bandgap for TlGaTe 2 crystal was reported as 0.82 eV 1, 6. Our Hall effect data analysis (not presented here) has shown that the energy level at 0.26 eV obtained from the dark electrical conductivity analysis is an acceptor level.…”

“…Single crystals of TlInTe 2 and TlGaTe 2 compounds belonging to p ‐type semiconductors have been extensively studied as a promising material for a wide range of practical applications 1–5. TlGaTe 2 crystal is reported to exhibit switching phenomena and negative‐differential resistance effects 6, 7 that allow it to play an important role in technological applications such as memory devices.…”

Photovoltaic Effect and Space Charge Limited Current Analysis in TlGaTe2Crystals

“…1b, reected no change in the resistivity activation energy (0.2 eV) along the a-axis, it exhibits a pronounced change from 0.26 to 0.41 eV above 330 K along the c-axis. The value of resistivity activation energy being 0.41 eV coincides with E g /2 (middle of energy band gap) and results in an energy band gap of 0.82 eV indicating that the crystal convert from extrinsic to intrinsic type semiconductor along the c-axis at temperature of 330 K. The energy band gap of TlGaTe 2 being 0.82 eV is close to that determined from band structure analysis as 0.86 eV [13] and as 0.84 eV [14]. Figure 2 displays the temperature dependence of the current densityvoltage characteristics being recorded along the a-axis.…”

Hall mobility and photoconductivity in TlGaSeS crystals

“…10 The abnormal behavior of mobility was attributed to high density of stoichiometric vacancies and creation of defects in the crystal. 17,18 B. Temperature-dependent steady state photoconductivity TlGaSeS single crystals are observed to exhibit room temperature light photosensitivity (S ¼ (I light À I dark )/I dark ) of 3.85 at 76.7 mW cm À2 . Figure 3 reflects the variation of steady state photocurrent (I ph ) as a function of reciprocal temperature being recorded at different light intensities in the range of 27.9-76.7 mW cm À2 .…”