Interpretation of the Raman spectra of bismuth oxide thin films presenting different crystallographic phases

Depablos-Rivera, Osmary; Martı́nez, Ana; Rodil, Sandra E.

doi:10.1016/j.jallcom.2020.157245

Cited by 44 publications

(34 citation statements)

References 103 publications

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“…Raman spectroscopy can provide information on the local structure and crystallinity of Bi nanoparticles and thin films [ 10 , 27 , 28 , 29 , 30 , 31 ]. In this work, we have analyzed film thickness-induced spectral changes for

-Bi and

-Bi samples.…”

Section: Resultsmentioning

confidence: 99%

“…The two first-order Raman modes of the Bi bulk E g and A 1g are at 69 cm −1 and 94 cm −1 , respectively [ 10 ]; in bismuth nanostructures, these peaks experience a significant blue-shift [ 27 , 28 ]. The structure of the thin bismuth layer might be affected by laser radiation-induced disordering and oxidation [ 29 , 30 ]. To eliminate possible laser radiation effects, extremely low (0.05 mW) laser power was employed.…”

Section: Resultsmentioning

confidence: 99%

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The Crystalline Structure of Thin Bismuth Layers Grown on Silicon (111) Substrates

et al. 2022

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Bismuth films with thicknesses between 6 and ∼30 nm were grown on Si (111) substrate by molecular beam epitaxy (MBE). Two main phases of bismuth — α-Bi and β-Bi — were identified from high-resolution X-ray diffraction (XRD) measurements. The crystal structure dependencies on the layer thicknesses of these films were analyzed. β-Bi layers were epitaxial and homogenous in lateral regions that are greater than 200 nm despite the layer thickness. Further, an increase in in-plane 2θ values showed the biaxial compressive strain. For comparison, α-Bi layers are misoriented in six in-plane directions and have β-Bi inserts in thicker layers. That leads to smaller (about 60 nm) lateral crystallites which are compressively strained in all three directions. Raman measurement confirmed the XRD results. The blue-sift of Raman signals compared with bulk Bi crystals occurs due to the phonon confinement effect, which is larger in the thinnest α-Bi layers due to higher compression.

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-Bi and

-Bi samples.…”

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

The Crystalline Structure of Thin Bismuth Layers Grown on Silicon (111) Substrates

et al. 2022

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“…oxygen ions and vacancies containing Bi cage in stabilized Bi/ Gd codoped cubic zirconia. 52 Further observed bands around 535 nm and 790 nm can be assigned to Raman vibrations of Gd containing sub lattice of stabilized Bi/Gd codoped cubic zirconia. 53 Thus the Raman spectroscopy study clearly reveal the formation of oxygen vacant Gd/Bi co-doped cubic zirconia lattice.…”

Section: Resultsmentioning

confidence: 91%

“…A careful examination of the Raman spectra also shows weak bands around 620, 660, and 815 cm À1 that could be associated with the rearrangement of the anionic sub-lattice, i.e. oxygen ions and vacancies containing Bi cage in stabilized Bi/ Gd codoped cubic zirconia 52. Further observed bands around 535 nm and 790 nm can be assigned to Raman vibrations of Gd containing sub lattice of stabilized Bi/Gd codoped cubic zirconia 53.…”

mentioning

confidence: 83%

Gd³⁺ and Bi³⁺ co-substituted cubic zirconia; (Zr_1−x−yGd_xBi_yO_2−δ): a novel high κ relaxor dielectric and superior oxide-ion conductor

2022

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“…Raman studies are extremely useful for identifying small amounts of another crystalline or amorphous phase in a given sample. This is very important in the case of materials exhibiting polymorphism 15 . In the case of , the best known is its monoclinic phase.…”

Section: Discussionmentioning

confidence: 99%

Facile and reproducible method of stabilizing $$\hbox {Bi}_2\hbox {O}_3$$ phases confined in nanocrystallites embedded in amorphous matrix

Pietrzak

Jarocka

Jastrzębski

et al. 2021

Sci Rep

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Bismuth sesquioxide ($$\hbox {Bi}_2\hbox {O}_3$$ Bi 2 O 3 ) draws much attention due to wide variety of phases in which it exists depending on the temperature. Among them, $$\delta$$ δ phase is specially interesting because of its high oxide ion conductivity and prospects of applications as an electrolyte in fuel cells. Unfortunately, it is stable only in a narrow temperature range ca. 730–830 $$^{\circ }$$ ∘ C. Our group has developed a facile and reproducible two-stage method of stabilizing $$\hbox {Bi}_2\hbox {O}_3$$ Bi 2 O 3 crystalline phases confined in nanocrystallites embedded in amorphous matrix. In the first stage, glassy materials were obtained by a routine melt-quenching method: pure $$\hbox {Bi}_2\hbox {O}_3$$ Bi 2 O 3 powders were melted in porcelain crucibles and fast-cooled down to room temperature. In the second step, the materials were appropriately heat-treated to induce formation of crystallites of $$\beta$$ β , $$\delta$$ δ or $$\gamma$$ γ $$\hbox {Bi}_2\hbox {O}_3$$ Bi 2 O 3 phases confined in a glassy matrix, depending on the process conditions. It was found out that the vitrification of the initial $$\hbox {Bi}_2\hbox {O}_3$$ Bi 2 O 3 and the subsequent nanocrystallization were unexpectedly possible due to the presence of some Al, and Si impurities from the crucibles. Systematic DTA, XRD, optical, Raman and SEM/EDS studies were carried out to investigate the influence of the syntheses processes and allowed us to determine conditions under which the particular phases appear and remain stable down to room temperature.

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Interpretation of the Raman spectra of bismuth oxide thin films presenting different crystallographic phases

Cited by 44 publications

References 103 publications

The Crystalline Structure of Thin Bismuth Layers Grown on Silicon (111) Substrates

The Crystalline Structure of Thin Bismuth Layers Grown on Silicon (111) Substrates

Gd³⁺ and Bi³⁺ co-substituted cubic zirconia; (Zr_1−x−yGd_xBi_yO_2−δ): a novel high κ relaxor dielectric and superior oxide-ion conductor

Facile and reproducible method of stabilizing $$\hbox {Bi}_2\hbox {O}_3$$ phases confined in nanocrystallites embedded in amorphous matrix

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Interpretation of the Raman spectra of bismuth oxide thin films presenting different crystallographic phases

Cited by 44 publications

References 103 publications

The Crystalline Structure of Thin Bismuth Layers Grown on Silicon (111) Substrates

The Crystalline Structure of Thin Bismuth Layers Grown on Silicon (111) Substrates

Gd3+ and Bi3+ co-substituted cubic zirconia; (Zr1−x−yGdxBiyO2−δ): a novel high κ relaxor dielectric and superior oxide-ion conductor

Facile and reproducible method of stabilizing $$\hbox {Bi}_2\hbox {O}_3$$ phases confined in nanocrystallites embedded in amorphous matrix

Contact Info

Product

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Gd³⁺ and Bi³⁺ co-substituted cubic zirconia; (Zr_1−x−yGd_xBi_yO_2−δ): a novel high κ relaxor dielectric and superior oxide-ion conductor