Interstitial defects on {′113} in Si and Ge Line defect configuration incorporated with a self-interstitial atom chain

Takeda, Seiji; Kohyama, Masanori; Ibe, K.

doi:10.1080/01418619408243186

Cited by 115 publications

(66 citation statements)

References 31 publications

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“…In each case, the displacement vector and fault plane were identical to those for the 1ϫ10 14 Si cm Ϫ2 dose. Samples from different Si implant doses, above the critical dose, were studied by TEM.…”

Section: A Si Implantationmentioning

confidence: 93%

“…First, there are the ͕311͖ rod-like defects with a ͕311͖ habit plane: 12 their dissolution was shown to cause TED of B in Si. 13 These defects have been shown to be interstitial, 14 with a displacement vector R of type a͗611͘/25 giving a dilation approximately perpendicular to the plane of the defect. More recently, some RLDs have been analyzed to have a ͕111͖ habit plane with displacement vector R of type a͗111͘/10.…”

Section: A Si Implantationmentioning

confidence: 99%

See 1 more Smart Citation

Transmission electron microscopy characterization of secondary defects created by MeV Si, Ge, and Sn implantation in silicon

Wong‐Leung

Fatima

Jagadish

et al. 2000

Journal of Applied Physics

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Triple crystal diffractometry, x-ray standing wave, and transmission electron microscopy investigation of shallow BF 2 implantation in Si J. Vac. Sci. Technol. B 20, 1436 (2002 Extended defects created in Si by ion implantation to doses below the amorphization threshold have been studied after annealing at 800°C for 15 min. The implant species were the group IV elements Si, Ge, and Sn, and structural defects created by similar damage distribution were compared. The mass of the implanted ion influences the type of defect observed. For all three implant species, rod-like ͕311͖ planar defects were observed. Additionally, in Ge and Sn implanted samples, small ͕111͖ interstitial faulted dislocation loops were observed.

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Section: A Si Implantationmentioning

confidence: 93%

Section: A Si Implantationmentioning

confidence: 99%

Transmission electron microscopy characterization of secondary defects created by MeV Si, Ge, and Sn implantation in silicon

Wong‐Leung

Fatima

Jagadish

et al. 2000

Journal of Applied Physics

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“…Four variants are lying parallel to the {100} implanted surface. 29,30 Some dislocation networks are observed within the bubble layer.…”

Section: B Sink For Interstitialsmentioning

confidence: 99%

“…{311} defects thus consist of a stacking of I 2 or I 3 (in the form of (110) chains of Si self-interstitials) stored in a stable configuration. 30 Twelve variants of this type of defects exist (elongated along the six h110i directions with two possible habit planes for each direction). Four variants are lying parallel to the {100} implanted surface.…”

Section: B Sink For Interstitialsmentioning

confidence: 99%

Lithium implantation at low temperature in silicon for sharp buried amorphous layer formation and defect engineering

Oliviero

David

Fichtner

et al. 2013

Journal of Applied Physics

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The crystalline-to-amorphous transformation induced by lithium ion implantation at low temperature has been investigated. The resulting damage structure and its thermal evolution have been studied by a combination of Rutherford backscattering spectroscopy channelling (RBS/C) and cross sectional transmission electron microscopy (XTEM). Lithium low-fluence implantation at liquid nitrogen temperature is shown to produce a three layers structure: an amorphous layer surrounded by two highly damaged layers. A thermal treatment at 400 C leads to the formation of a sharp amorphous/crystalline interfacial transition and defect annihilation of the front heavily damaged layer. After 600 C annealing, complete recrystallization takes place and no extended defects are left. Anomalous recrystallization rate is observed with different motion velocities of the a/c interfaces and is ascribed to lithium acting as a surfactant. Moreover, the sharp buried amorphous layer is shown to be an efficient sink for interstitials impeding interstitial supersaturation and {311} defect formation in case of subsequent neon implantation. This study shows that lithium implantation at liquid nitrogen temperature can be suitable to form a sharp buried amorphous layer with a well-defined crystalline front layer, thus having potential applications for defects engineering in the improvement of post-implantation layers quality and for shallow junction formation. V C 2013 American Institute of Physics.

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“…By employing the transmission electron microscopy ͑TEM͒, the crystallographic structure of the defects, formed during the low temperature epitaxial regrowth, has been resolved and to date four types of extended defects in Si are known: small interstitial clusters ͑less than ten atoms, invisible by TEM͒, elongated or rodlike defects, called ͕113͖'s, and perfect and faulted dislocation loops ͑PDLs and FDLs, respectively͒. [1][2][3][4] It has been ascertained that, during annealing, all these defects evolve following an Ostwald ripening process and, eventually, they change their crystallographic structure, in order to minimize their formation energy. 4 During a moderate thermal annealing ͑600-800°C͒, ͕113͖'s are initially formed.…”

Section: Evidences Of An Intermediate Rodlike Defect During the Transmentioning

confidence: 99%

Evidences of an intermediate rodlike defect during the transformation of {113} defects into dislocation loops

Boninelli

Cherkashin

Claverie

et al. 2006

Applied Physics Letters

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A detailed study of the transformation of the {113} defects into dislocation loops has been carried out in Ge preamorphized silicon (30keV, 1×1015Ge+∕cm2) and annealed at 800°C for time ranging from 15to2700s. The presence of a stable defect, along the ⟨110⟩ directions, formed during the transformation from {113}’s into Frank dislocation loops (FDLs), has been revealed and studied. Performing a detailed transmission electron microscopy analysis in nonconventional zone axes, a 1∕3 [111]-type Burgers vector has been found. These defects are shown to be more stable than {113}’s but less than FDLs.

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Interstitial defects on {′113} in Si and Ge Line defect configuration incorporated with a self-interstitial atom chain

Cited by 115 publications

References 31 publications

Transmission electron microscopy characterization of secondary defects created by MeV Si, Ge, and Sn implantation in silicon

Transmission electron microscopy characterization of secondary defects created by MeV Si, Ge, and Sn implantation in silicon

Lithium implantation at low temperature in silicon for sharp buried amorphous layer formation and defect engineering

Evidences of an intermediate rodlike defect during the transformation of {113} defects into dislocation loops

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