Intersubband absorption in CdSe∕ZnxCdyMg1−x−ySe self-assembled quantum dot multilayers

Shen, Aidong; Lü, Hong; Charles, William; Yokomizo, I.; Tamargo, M. C.; Franz, Kale J.; Gmachl, Claire F.; Zhang, S. K.; Zhou, X.; Alfano, R. R.; Liu, H. C.

doi:10.1063/1.2679783

Cited by 7 publications

(1 citation statement)

References 18 publications

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“…Large CBOs are available in wide bandgap materials , which has driven research into materials such as II-VI [19][20][21][22][23][24] and AlGaN/GaN [25][26][27][28][29][30] material systems. The II-VI system is based on complex quaternary alloys, which complicate design and material synthesis.…”

Section: Introductionmentioning

confidence: 99%

Theoretical investigation of optical intersubband transitions and infrared photodetection in β-(AlxGa1 − x)2O3/Ga2O3 quantum well structures

Lyman

Krishnamoorthy

2020

Journal of Applied Physics

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We provide theoretical consideration of intersubband transitions designed in the ultrawide bandgap Aluminum Gallium Oxide ((AlxGa1-x)2O3)/Gallium Oxide (Ga2O3) quantum well system. Conventional material systems have matured into successful intersubband device applications such as large area quantum well infrared photodetector (QWIP) focal plane arrays for reproducible imaging systems but are fundamentally limited via maximum conduction band offsets to mid-and long-wavelength infrared applications. Short-and near-infrared devices are technologically important to optical communications systems and biomedical imaging applications, but are difficult to realize in intersubband designs for this reason. In this work, we use a first-principles approach to estimate the expansive design space of monoclinic β-(AlxGa1x)2O3/Ga2O3 material system, which reaches from short-wavelength infrared (1-3 µm) to far infrared (>30 µm) transition wavelengths. We estimate the performance metrics of two QWIPs operating in the long-and short-wavelength regimes, including an estimation of high roomtemperature detectivity (~ 10 11 Jones) at the optical communication wavelength λp = 1.55 µm.Our findings demonstrate the potential of the rapidly maturing (AlxGa1-x)2O3/Ga2O3 material system to open the door for intersubband device applications.

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Section: Introductionmentioning

confidence: 99%

Theoretical investigation of optical intersubband transitions and infrared photodetection in β-(AlxGa1 − x)2O3/Ga2O3 quantum well structures

Lyman

Krishnamoorthy

2020

Journal of Applied Physics

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Room temperature and high responsivity short wavelength II-VI quantum well infrared photodetector

Ravikumar

Chen²,

Zhao³

et al. 2013

Applied Physics Letters

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We report the experimental demonstration of a room temperature, high responsivity, short wavelength II-VI Zn0.51Cd0.49Se/Zn0.29Cd0.26Mg0.45Se based quantum well infrared photodetector operating between 3 and 5 μm. Spectral response was observed up to room temperature with a cut off wavelength of 5 μm at 280 K. Measurements with a calibrated blackbody source yielded a peak responsivity of over 30 A/W at 280 K and an applied bias of −3 V. The dark current limited peak detectivity at 80 K and 280 K were measured to be 2 × 109 cm √Hz/W and 4 × 107 cm √Hz/W, respectively. These results are consistent with theoretical calculations that predict a maximum detectivity of the order of 107 cm √Hz/W at room temperature for typical carrier lifetimes and optimized doping levels.

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High detectivity short-wavelength II-VI quantum cascade detector

Ravikumar

Garcia

Jesús

et al. 2014

Applied Physics Letters

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We report on the experimental demonstration of a ZnCdSe/ZnCdMgSe-based short-wavelength photovoltaic Quantum Cascade Detector (QCD). The QCD operates in two spectral bands centered around 2.6 μm and 3.6 μm. Calibrated blackbody measurements yield a peak responsivity of 0.1 mA/W or 2400 V/W at 80 K, and a corresponding 300 K background radiation limited infrared performance detectivity (BLIP) of ∼2.5 × 1010 cm √Hz/W. Comparison of background illuminated and dark current-voltage measurements demonstrates a BLIP temperature of 200 K. The device differential resistance-area product, decreases from about 106 Ω cm2 at 80 K to about 8000 Ω cm2 at 300 K, indicative of the ultra-low Johnson noise in the detectors.

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Intersubband absorption in CdSe∕ZnxCdyMg1−x−ySe self-assembled quantum dot multilayers

Cited by 7 publications

References 18 publications

Theoretical investigation of optical intersubband transitions and infrared photodetection in β-(AlxGa1 − x)2O3/Ga2O3 quantum well structures

Theoretical investigation of optical intersubband transitions and infrared photodetection in β-(AlxGa1 − x)2O3/Ga2O3 quantum well structures

Room temperature and high responsivity short wavelength II-VI quantum well infrared photodetector

High detectivity short-wavelength II-VI quantum cascade detector

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