Room temperature and high responsivity short wavelength II-VI quantum well infrared photodetector

Abstract

We report the experimental demonstration of a room temperature, high responsivity, short wavelength II-VI Zn0.51Cd0.49Se/Zn0.29Cd0.26Mg0.45Se based quantum well infrared photodetector operating between 3 and 5 μm. Spectral response was observed up to room temperature with a cut off wavelength of 5 μm at 280 K. Measurements with a calibrated blackbody source yielded a peak responsivity of over 30 A/W at 280 K and an applied bias of −3 V. The dark current limited peak detectivity at 80 K and 280 K were measured to be 2 × 109 cm √Hz/W and 4 × 107 cm √Hz/W, respectively. These results are consistent with theoretical calculations that predict a maximum detectivity of the order of 107 cm √Hz/W at room temperature for typical carrier lifetimes and optimized doping levels.

Bandgap-controlled non-equilibrium ZnO1−xSx thin films grown by pulsed laser deposition method

“…In particular, Zn-based II-VI semiconductors (ZnO, ZnS, ZnSe, and ZnTe) are studied for solar cell buffer layers and transparent electrodes [1]. Furthermore, optical bandgap engineering is required for liquid crystal displays (LCDs) and light emitting diodes (LEDs) [2]. Alloys of Zn-based II-VI semiconductors have been studied to investigate bandgap engineering possibilities.…”

Growth and characterization of ZnCdSe/ZnCdMgSe two‐color quantum well infrared photodetectors

“…Recently, we have shown that selenide-based wide band gap II-VI semiconductors are attractive alternatives for intersubband (ISB) devices, especially those working in the short wavelength range [13][14][15][16]. We have demonstrated that QWIPs with high performance can also be fabricated from ZnCdSe/ZnCdMgSe multiple quantum wells (MQWs) [17][18][19]. ZnCdMgSe can be grown lattice-matched on InP substrates with a large tuneable band gap (from 2.1 to 3.5 eV).…”

Characteristics of II–VI Quantum Dot Infrared Photo-Detectors

“…QDIPs were usually fabricated using self-assembled QDs made from III-V based material systems. Instead, in the last few years, II-VI ZnSe based material systems have been comprehensively studied for their possible use in infrared detection [6][7][8].…”