Intersubband transitions in Al_0.82In_0.18N/GaN single quantum well

Abstract

Intersubband transitions in Al 0.82 In 0.18 N/GaN single quantum well * Wang Yu-Zhou( ), Li Ding( ), Li Lei( ), Liu Ning-Yang( ), Liu Lei( ),

Shear lag analysis of I‐shaped structural members

“…By substituting Equation 16 into Equation 13, the total potential energy of I-shaped shear walls can be obtained and expressed as Equation 17:…”

“…where q is the uniform load acting on the beam. Substituting Equation 29 into Equation 13, and the total potential energy of I-shaped beams can be obtained and expressed as Equation 30…”

“…Takayanagi et al [12] investigated the shear lag effect of carbon-fiber reinforced plastic I-shaped beams based on the modified Reissner's method, and the anisotropic properties of flange material were considered. Gan et al [3,13] proposed a computation method to analyze the shear lag effect of I-shaped straight, curved beams based on the energy variation principle, and numerical analysis was also conducted to verify the accuracy of the method. Normally, the differential function of longitudinal displacement or differential function of maximum angular displacement was used as the generalized displacement; however, the physical meaning of the displacements is not clear, which cannot be measured directly.…”

Intersubband transitions in In x Al (1 − x ) N/In y Ga (1 − y

“…In x Al (1−x) N with low indium concentration (17-20%) is lattice-matched to GaN, and the conduction band discontinuity is much broader, which is consistent with the design of heterostructures with intersubband transitions ISBT in the infrared range. [21][22][23][24] Unlike other materials, the piezoelectric polarization in In x Al (1−x) N-GaN interfaces is not important because of the absence of strain in the lattice-matched. The absence of the piezoelectric effect and the large conduction band offset in In x Al (1−x) N-GaN materials make them more accessible than other materials such as AlGaN/GaN.…”

“…The absence of the piezoelectric effect and the large conduction band offset in In x Al (1−x) N-GaN materials make them more accessible than other materials such as AlGaN/GaN. Among many theoretical studies, Zhou et al, [23] studied the effect of single quantum well thickness on electronic properties, such as the optical absorption. They showed that it is possible to obtain the mid-infrared domain by changing the width of the quantum well and then reducing the effect of the asymmetry produced by the polarization field.…”