Intrinsic and Extrinsic Recombination Radiation from Natural and Synthetic Aluminum-Doped Diamond

Dean, P.D.G.; Lightowlers, E C; Wight, D.R.

doi:10.1103/physrev.140.a352

Cited by 382 publications

(138 citation statements)

References 37 publications

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“…This progress has been partly evidenced because in these synthetic boron doped crystals, hole mobility reached values similar to those known in the best natural crystals in the past [6][7][8]. However, deep levels, either compensating centres or hole traps, have been documented only in few samples [9][10][11].…”

Section: Introductionmentioning

confidence: 85%

Electrically active defects in boron doped diamond homoepitaxial layers studied from deep level transient spectroscopies and other techniques

Muret¹,

Kumar²,

Volpe³

et al. 2009

Physica Status Solidi (a)

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Homoepitaxial thin films of boron doped diamond are investigated with the help of Fourier transform deep level transient spectroscopy (FT‐DLTS) and high resolution isothermal transient spectroscopy (HR‐ITS) in order to determine the properties of hole traps. Conductivity studies and other characterisation techniques of defects are also used to bring complementary information. The main conclusions are as follows: (i) many hole traps can be found with activation energies in the range 0.9–1.6 eV; (ii) most of them show inwards decreasing concentrations, which passes below 1015/cm3 at a depth close to a few hundred nanometers from the surface; (iii) some of them are metastable, in the sense the emission rate distribution undergoes changes after thermal treatments performed at temperatures well below those used for growth and previous annealing. These two last facts suggest that hydrogen atoms may be involved in charged defects. In other samples, an irreversible decrease of the conductivity correlated with the increase of the cathodoluminescence (CL) A band demonstrates that a deep donor is connected with dislocations and acts as a very efficient compensating centre in the first 400 nm just below the surface but with a decreasing concentration deeper inside the homoepitaxial layer. The physical origin of these deep levels is discussed and believed to be likely connected with hydrogen atoms.

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Section: Introductionmentioning

confidence: 85%

Electrically active defects in boron doped diamond homoepitaxial layers studied from deep level transient spectroscopies and other techniques

Muret¹,

Kumar²,

Volpe³

et al. 2009

Physica Status Solidi (a)

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“…The valence bands in diamond have their maxima at k = 0, and the minimum in the first conduction band at k = 0.76 of the zone boundary in the 001 directions [48]. The energy gap at low temperature is 5.49 eV, much larger than the other Group IV semiconductors, while the spin-orbit splitting at the maximum of the valence band is particularly small at ∼12 meV [80].…”

Section: Dispersion Curvesmentioning

confidence: 93%

“…However, because the recombination without involving a phonon is forbidden, there is uncertainty in the value of ω. It may be measured from the onset of the equivalent absorption process, at hν = E b + ω [48]:…”

Section: Special Values Of K: Other Modesmentioning

confidence: 99%

Basic Properties of Diamond: Phonon Spectra, Thermal Properties, Band Structure

Davies

2009

CVD Diamond for Electronic Devices and Sensors

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“…It is well known that at zero temperature, the band gap of diamond increases with pressure, and this result is reproduced in our calculations. The GGA approx- imation is known to underestimate the gap, compared both to experiment [41,42] (5.45 eV) and calculations with manybody corrections (5.6 eV) [43]. In order to study whether diamond metalizes before melting, we have investigated the gap determined by the single particle energy difference between the highest occupied orbital and the lowest unocuppied orbital (HOMO-LUMO gap) of the solid as a function of P and T .…”

Section: Two-phase Simulationsmentioning

confidence: 99%

FY05 LDRD Final Report Chemical Dynamics At Interfaces

Schwegler¹,

Ogitsu²,

Bonev³

et al. 2006

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This project has been focused on the development and application of ab initio simulation methods to study at the microscopic level a variety of complex interfacial systems under extreme conditions. By building on our existing expertise in first principles molecular dynamics, we have developed new techniques for the calculation of melting lines entirely from first principles (two-phase simulation methods). The simulation methods developed in this project have been applied to a set of low-Z materials that are relevant to potential NIF early light experiments.

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Intrinsic and Extrinsic Recombination Radiation from Natural and Synthetic Aluminum-Doped Diamond

Cited by 382 publications

References 37 publications

Electrically active defects in boron doped diamond homoepitaxial layers studied from deep level transient spectroscopies and other techniques

Electrically active defects in boron doped diamond homoepitaxial layers studied from deep level transient spectroscopies and other techniques

Basic Properties of Diamond: Phonon Spectra, Thermal Properties, Band Structure

FY05 LDRD Final Report Chemical Dynamics At Interfaces

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