Intrinsic feedback and bistable switching in Y-branched nanojunctions

Reitzenstein, Stephan; Worschech, L.; Hartmann, David; Forchel, A.

doi:10.1103/physrevb.81.153411

Cited by 2 publications

(9 citation statements)

References 17 publications

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“…This indicates that the output voltage influences the threshold voltage of the Y-transistor via the capacitive coupling of the branches in configuration 2, in accordance with experimental data reported in Ref. [14].…”

Section: Methodssupporting

confidence: 91%

“…We refer to Ref. [14] for more details on the voltage dependent gate efficiency. At more negative V in electrons from the left branch are injected over the tunnel barrier into to the branching and the stem which results in a reduction of V out .…”

Section: Methodsmentioning

confidence: 99%

“…This constriction introduces a potential barrier between the left branch and the branching section which is crucial for the performance of the Y-transistor. In fact, the constriction allows one to suppress leakage currents when controlling the current between the stem and the right branch by voltages applied to the left branch (gate-contact) which is capacitively coupled to the branching section via C g [14]. This gating scheme is schematically shown in Fig.…”

Section: Technologymentioning

confidence: 99%

“…The operation relies on the capacitive coupling and internal feedback in Y-junctions introduced and studied in Refs. [12] and [14], which we apply for the first time in a controlled way to improve and comprehensively analyze the device performance of a Y-junction acting as sub-kT transistor. Moreover, we explore two configurations in which either the stem of the Y-junction or one of the branches acts as source contact.…”

Section: Introductionmentioning

confidence: 99%

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Sub-kT Switching in Asymmetric Y-Transistors With Internal Feedback Coupling

Reitzenstein

Hartmann

Kamp

et al. 2015

IEEE J. Electron Devices Soc.

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We report on nonlinear transport phenomena in an asymmetric Y-transistor. The left branch acting as gate for the channel formed between the stem and the right branch of the Y-transistor is isolated from the branching section via a narrow constriction. The transfer characteristics of the Y-transistor is studied at low temperature in two configurations for which the stem is used either as drain contact or source contact. In the latter configuration, internal feedback coupling allows us to demonstrate subthreshold slopes 30% below the thermodynamic kT-limit for conventional field effect transistors.

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Section: Methodssupporting

confidence: 91%

Section: Methodsmentioning

confidence: 99%

Section: Technologymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Sub-kT Switching in Asymmetric Y-Transistors With Internal Feedback Coupling

Reitzenstein

Hartmann

Kamp

et al. 2015

IEEE J. Electron Devices Soc.

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“…The other terminal (stem or left branch) is decoupled due to a depletion of the 2DEG and can act as an additional gate. 31,32 Since the stem is connected to the common ground, no gating effect occurs for negative V l and V th is proportional to V d as reported in Ref. 27.…”

mentioning

confidence: 80%

Associative learning with Y-shaped floating gate transistors operated in memristive modes

Maier

Hartmann

Emmerling

et al. 2017

Applied Physics Letters

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2Associative learning in neural networks is crucial and required to relate new experience with existing memories and was first observed by I. Pavlov in his famous dog experiment. 1 Stimulating different senses by the sight of food and the sound of a bell, I. Pavlov trained his dog to correlate salivation with the sound of the bell (association), although at the beginning of the experiment salivation was only triggered by the sight of food. In neural networks, association corresponds to an increase of synaptic strength, which is controlled by action potentials emitted by pre-and postsynaptic neurons. 2,3 Associative learning can be emulated with memristive Hopfield neural networks, 4 memristive circuits 5,6,7,8 or magnetic tunnel junctions. 9 Other demonstrations of associative learning implement two artificial synapses with memristor emulators 10 or a resistor and a memristor. 11 Artificial synapses based on memristors enable synaptic modifications by applying pre-and postsynaptic voltage pulses to the two terminals of the device, 12,13 which allows to combine information storage and processing on the same physical platform. 14,15,16 Owing to the two-terminal character, however, the application of postsynaptic voltage pulses blocks the device output and prevents information to be transferred during the learning process. The devices separate signal transmission and learning. Hence,18,19 or even fourterminal 20 synaptic devices may be beneficial because of their ability to decouple the postsynaptic pulse from the output. Indeed, associative learning with simultaneous learning and signal transmission has been demonstrated with three-terminal synapses based on nano-particle organic memory field effect transistors by applying postsynaptic pulses with amplitudes as large as 30 V to the third terminal. 21 In memristor-synapses, extra terminals may be implemented with additional gates that allow tuning the set voltage with an electric field effect. 22 We report associative learning with Y-shaped quantum dot floating gate transistors operated in memristive modes. The geometry of the devices with two input terminals and one output terminal enables realizing associative learning with postsynaptic voltage amplitudes as low as 0.5 V. The 3 conductance of the Y-shaped quantum dot floating gate transistor depends on the amount of localized charges on quantum dots (QDs) that are precisely positioned in the two input terminals. Emulating external stimuli "food" and "bell" with two input voltages allows implementing an association between "bell" and "salivation". The number of required pulses to develop (association) or to forget (extinction) the correlation between "bell" and "salivation" is controlled by the amplitudes of the input voltages. Connecting the voltage applied to the drain contact (i.e. right branch V r ) with the side gates (see Fig. 1(a)) leads to a memristive operation. 25,26,27 The Y-shaped floating gate transistor is characterized by applying the voltage V r = V l to both branches with resistances of R l = R...

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Intrinsic feedback and bistable switching in Y-branched nanojunctions

Cited by 2 publications

References 17 publications

Sub-kT Switching in Asymmetric Y-Transistors With Internal Feedback Coupling

Sub-kT Switching in Asymmetric Y-Transistors With Internal Feedback Coupling

Associative learning with Y-shaped floating gate transistors operated in memristive modes

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