Intrinsic polarization coupling in 2D α‐In₂Se₃toward artificial synapse with multimode operations

Abstract

Emulation of advanced synaptic functions of the human brain with electronic devices contributes an important step toward constructing high-efficiency neuromorphic systems. Ferroelectric materials are promising candidates as synaptic weight elements in neural network hardware due to their controllable polarization states. However, the increased depolarization field at the nanoscale and the complex fabrication process of the traditional ferroelectric materials hamper the development of high-density, low-power, and highly sensitive synaptic devices. Here, we report the implementation of twodimensional (2D) ferroelectric α-In 2 Se 3 as an active channel material to emulate typical synaptic functions. The α-In 2 Se 3-based synaptic device features multimode operations, enabled by the coupled ferroelectric polarization under various voltage pulses applied at both drain and gate terminals. Moreover, the energy consumption can be reduced to~1 pJ by using high-κ dielectric (Al 2 O 3). The successful control of ferroelectric polarizations in α-In 2 Se 3 and its application in artificial synapses are expected to inspire the implementation of 2D ferroelectric materials for future neuromorphic systems. K E Y W O R D S 2D ferroelectrics, artificial synapse, high-κ dielectric, multimode operations, α-In 2 Se 3 1 | INTRODUCTION Over the past few decades, computers based on the conventional von Neumann architecture have achieved great success in performing arithmetic operations, leading to the revolution of information technology. 1 However, the physically separated logic and memory blocks, known as von Neumann bottleneck, inevitably limit the computational efficiency and speed as well as the scalability of the architecture. 2,3 Inspired by human brain, neuromorphic

Low-power flexible organic memristor based on PEDOT:PSS/pentacene heterojunction for artificial synapse

“…Artificial synapses are attracting increased attention as the key in-memory computational cell for neuromorphic computing (Zhu et al, 2020;Gao et al, 2021;Wang et al, 2022). Resistive switching (RS)-based memristor is being actively investigated as an artificial synapse due to its low power consumption, tunable 10.3389/fnins.2022.1016026 conductance, and high scalability (Xia and Yang, 2019;Kumar et al, 2022).…”

Organic Semiconductor Crystal Engineering for High‐Resolution Layer‐Controlled 2D Crystal Arrays

“…2D layered materials have attracted increasing interest for fundamental physical investigations and advanced device applications since the emergence of graphene. [ 1–5 ] 2D organic semiconductor crystals (2DOSCs) are a significant class of ultrathin crystals because they have high charge transport characteristics, solution‐processability, excellent flexibility, and show great potential for electronic and optoelectronic applications. [ 6–10 ] The ultrathin 2DOSCs can efficiently eliminate interlayer charge shielding compared to bulk OSCs; they also facilitate charge transport more rapidly and modulate charge carrier injection more effectively.…”

A Flexible Artificial Sensory Nerve Enabled by Nanoparticle‐Assembled Synaptic Devices for Neuromorphic Tactile Recognition

“…This is another important synaptic property, in which the synaptic weight between connected neurons changes in response to the firing rate of action potentials. [ 28,29 ] Spike trains (5 V, 50 ms, 10 spikes) with higher frequency lead to larger synaptic weight (up to 13.9) and higher PSC (up to 1.2 µA), indicating that the device acts as a dynamic high‐pass filter. This device property is similar to the temporal filtering in synaptic transmission for neural information processing, [ 1,28 ] and it serves as the guideline for implementing the spike‐rate coding strategy.…”