2009
DOI: 10.1103/physrevb.80.132503
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Intrinsic quantum melting of a driven vortex lattice in amorphousMoxGe1xfilms

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Cited by 17 publications
(7 citation statements)
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“…The mean-field transition temperature T c0 defined by a 95% criterion of the normal-state resistivity [30], ρ(T c0 ) = 0.95ρ n , and the zero-resistivity temperature T c are 6.1 and 6.0 K, respectively. A good homogeneity of the sample was confirmed, e.g., from a relatively sharp resistive transition as a function of temperature T and field B down to below 0.1 K [28,29] and from a sharp structural transition of vortex matter (the order-disorder transition) at the peak-effect regime [27] (see below). Furthermore, the reproducibility of the vortex states for different samples prepared independently was also confirmed (see, e.g., [27]).…”
Section: Methodsmentioning
confidence: 78%
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“…The mean-field transition temperature T c0 defined by a 95% criterion of the normal-state resistivity [30], ρ(T c0 ) = 0.95ρ n , and the zero-resistivity temperature T c are 6.1 and 6.0 K, respectively. A good homogeneity of the sample was confirmed, e.g., from a relatively sharp resistive transition as a function of temperature T and field B down to below 0.1 K [28,29] and from a sharp structural transition of vortex matter (the order-disorder transition) at the peak-effect regime [27] (see below). Furthermore, the reproducibility of the vortex states for different samples prepared independently was also confirmed (see, e.g., [27]).…”
Section: Methodsmentioning
confidence: 78%
“…This is due to the effect of T resulting from Joule heating by increased I. Thus, from the decreased value of R(I) at each T and from a R(T) curve for small I, we can estimate T for given I (dissipation) and T [28]. All the data presented in this paper were measured with I giving rise to T < 0.01 K.…”
Section: Methodsmentioning
confidence: 95%
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“…By applying a transport current, they are driven and generate voltage. Using a mode-locking (ML) technique [1][2][3][4][5][6][7][8], in which the vortex lattice is driven fast by superimposed dc (I) and ac currents (I r f ), we have recently found the rearrangement (rotation) of the lattice orientation from the perpendicular to parallel orientation [9] induced by dc and/or ac velocity [10]. This phenomenon is considered to be a new type of dynamic transition caused by increased velocity.…”
Section: Introductionmentioning
confidence: 99%
“…Recently, Okuma et al 21 studied the order-disorder transition ͑ODT͒ of driven vortex matter in amorphous MoGe films near the PE regime of critical current. Quite recently, Okuma et al [24][25][26][27] studied the dynamic melting of a driven vortex lattice in disordered ␣-Mo x Ge 1−x films down to near-zero temperature using the mode-locking technique. These results suggested the existence of the ODT and vortex instabilities due to coexisting vortex phases around B p .…”
Section: Introductionmentioning
confidence: 99%