Intrinsic rectification in common-gated graphene field-effect transistors

Haddad, Pierre-Antoine; Flandre, Denis; Raskin, Jean‐Pierre

doi:10.1016/j.nanoen.2017.10.049

Cited by 9 publications

(7 citation statements)

References 32 publications

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“…This is beneficial towards the electron transfer from graphene to Pd, enhancing hole density in p -type graphene. Our experimental results confirm this fact 59 . The baseline resistance of the pure graphene sensor is decreased from 2395 to 530 Ω after Pd decoration (as shown in Fig.…”

Section: Discussionsupporting

confidence: 85%

Chemically deposited palladium nanoparticles on graphene for hydrogen sensor applications

Tang

Haddad

Mager

et al. 2019

Sci Rep

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Graphene decorated by palladium (Pd) nanoparticles has been investigated for hydrogen sensor applications. The density of Pd nanoparticles is critical for the sensor performance. We develop a new chemical method to deposit high-density, small-size and uniformly-distributed Pd nanoparticles on graphene. With this method, Pd precursors are connected to the graphene by π-π bonds without introducing additional defects in the hexagonal carbon lattice. Our method is simple, cheap, and compatible with complementary metal-oxide semiconductor (CMOS) technology. This method is used to fabricate hydrogen sensors on 3-inch silicon wafers. The sensors show high performance at room temperature. Particularly, the sensors present a shorter recovery time under light illumination. The sensing mechanism is explained and discussed. The proposed deposition method facilitates mass fabrication of the graphene sensors and allows integration with CMOS circuits for practical applications.

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Section: Discussionsupporting

confidence: 85%

Chemically deposited palladium nanoparticles on graphene for hydrogen sensor applications

Tang

Haddad

Mager

et al. 2019

Sci Rep

Self Cite

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“…Here, according to the electrical characteristic of our monolayer graphene sheet shown in Supplementary Fig. 8 , we assumed that the doping level of graphene is close to undoped 56 . The subsequent depletion of the charge carriers out of the probe energy states was also considered (see Supplementary Note 6 for the details on theoretical modeling).…”

Section: Resultsmentioning

confidence: 99%

Pseudo-magnetic field-induced slow carrier dynamics in periodically strained graphene

et al. 2021

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The creation of pseudo-magnetic fields in strained graphene has emerged as a promising route to investigate intriguing physical phenomena that would be unattainable with laboratory superconducting magnets. The giant pseudo-magnetic fields observed in highly deformed graphene can substantially alter the optical properties of graphene beyond a level that can be feasible with an external magnetic field, but the experimental signatures of the influence of such pseudo-magnetic fields have yet to be unveiled. Here, using time-resolved infrared pump-probe spectroscopy, we provide unambiguous evidence for slow carrier dynamics enabled by the pseudo-magnetic fields in periodically strained graphene. Strong pseudo-magnetic fields of ~100 T created by non-uniform strain in graphene on nanopillars are found to significantly decelerate the relaxation processes of hot carriers by more than an order of magnitude. Our findings offer alternative opportunities to harness the properties of graphene enabled by pseudo-magnetic fields for optoelectronics and condensed matter physics.

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“…However, the device I d is a function of channel length and width,

. The effect of the channel dimension on the device I d follows the following equation [ 80 ].

where the parameters

and

are width and length of the channel, respectively;

and

are electron and hole mobility, respectively; and

is the conductivity of the channel.…”

Section: Resultsmentioning

confidence: 99%

“…This is one of the positive characteristics of the device that shows the sensing properties of the device will not be affected by the structural device dimensions. However, the device Id is a function of channel length and width, ∝ .The effect of the channel dimension on the device Id follows the following equation [80]. To give a more authenticated perception to the device study, I d -V g curves were calculated at V d of 10 mV for the devices with different channel dimensions (W × L).…”

Section: Characteristics Of Devicementioning

confidence: 99%

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Finite Element Modelling of Bandgap Engineered Graphene FET with the Application in Sensing Methanethiol Biomarker

Singh

Sohi

Kahrizi

2021

Sensors

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In this work, we have designed and simulated a graphene field effect transistor (GFET) with the purpose of developing a sensitive biosensor for methanethiol, a biomarker for bacterial infections. The surface of a graphene layer is functionalized by manipulation of its surface structure and is used as the channel of the GFET. Two methods, doping the crystal structure of graphene and decorating the surface by transition metals (TMs), are utilized to change the electrical properties of the graphene layers to make them suitable as a channel of the GFET. The techniques also change the surface chemistry of the graphene, enhancing its adsorption characteristics and making binding between graphene and biomarker possible. All the physical parameters are calculated for various variants of graphene in the absence and presence of the biomarker using counterpoise energy-corrected density functional theory (DFT). The device was modelled using COMSOL Multiphysics. Our studies show that the sensitivity of the device is affected by structural parameters of the device, the electrical properties of the graphene, and with adsorption of the biomarker. It was found that the devices made of graphene layers decorated with TM show higher sensitivities toward detecting the biomarker compared with those made by doped graphene layers.

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Intrinsic rectification in common-gated graphene field-effect transistors

Cited by 9 publications

References 32 publications

Chemically deposited palladium nanoparticles on graphene for hydrogen sensor applications

Chemically deposited palladium nanoparticles on graphene for hydrogen sensor applications

Pseudo-magnetic field-induced slow carrier dynamics in periodically strained graphene

Finite Element Modelling of Bandgap Engineered Graphene FET with the Application in Sensing Methanethiol Biomarker

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