2014
DOI: 10.1103/physrevb.90.134426
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Intrinsic versus extrinsic ferromagnetism inHfO2xandNi:HfO2

Abstract: We have investigated the possible evolution of an intrinsic stable ferromagnetic moment in oxygen deficient undoped and magnetically doped HfO 2−x thin films grown by reactive molecular beam epitaxy. Neither oxygen vacancies nor substituted Ni in combination with such vacancies results in an observable magnetic moment for a broad range of oxygen vacancy concentrations. By combining integral and element specific magnetization measurements, we show that a fluctuating deposition rate of the magnetic dopant induce… Show more

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Cited by 9 publications
(3 citation statements)
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“…The reported total magnetic moment is 1.0 µ B per N defect. In contrast, a study by Hildebrandt et al 15 , taking into account a broad range of oxygen vacancy concentrations and magnetic dopants, has shown that undoped, oxygendeficient, or magnetically doped hafnia does not possess intrinsic ferromagnetism.…”
Section: Introductionmentioning
confidence: 88%
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“…The reported total magnetic moment is 1.0 µ B per N defect. In contrast, a study by Hildebrandt et al 15 , taking into account a broad range of oxygen vacancy concentrations and magnetic dopants, has shown that undoped, oxygendeficient, or magnetically doped hafnia does not possess intrinsic ferromagnetism.…”
Section: Introductionmentioning
confidence: 88%
“…A lower than ideal performance in electronic gates can be explained by the formation of defect-related fixed charges 13,14 . The monoclinic phase has been well studied both experimentally via scattering techniques 15,16 , and theoretically using DFT 4,[17][18][19] . Moreover, first-principles calculations carried out on the low-temperature monoclinic phase of hafnia with oxygen vacancies and oxygen interstitials suggest that the oxygen vacancies represent the main electron traps 18 .…”
Section: Introductionmentioning
confidence: 99%
“…11 Recently, both the physical origin and the experimental phenomenon have been investigated widely on a number of semiconductor materials such as ZnO, TiO 2 , MnO 2 , HfO 2 and SnO 2 . 12,[13][14][15][16] Frequently, intrinsic defects emerging in the crystal account for the magnetic behavior in most of the undoped materials. The high-spin defect state formed by isolated defects would be coupled ferromagnetically with a shortrange magnetic interaction creating a ferromagnetic ground state.…”
Section: Introductionmentioning
confidence: 99%