Intrinsic Voltage Gain and Unit-Gain Frequency of Omega-Gate Nanowire SOI MOSFETs

Perina, Welder F.; Martino, João Antônio; Agopian, Paula Ghedini Der

doi:10.1109/sbmicro.2019.8919278

Cited by 5 publications

(2 citation statements)

References 7 publications

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“…Besides the better response to short channel effects, a good electrical behavior has been reported for omega-gate nanowire SOI MOSFET in (2)(3)(4)(5). This device also presents less complexity of fabrication process than GAA devices such as stacked nanosheets, making it a good option for many applications.…”

Section: Introductionmentioning

confidence: 99%

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Operational Transconductance Amplifier Designed with Experimental Omega-Gate Nanowire SOI MOSFETs

Araujo¹,

Martino²,

Agopian³

2023

ECS Trans.

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Operational Transconductance Amplifier (OTA) designed with Omega-gate Nanowire SOI MOSFETs was evaluated. The transistor model was created using Verilog-A language and a Look-Up Table strategy, which is based on very precise measurements of the fabricated device. For the model, both the current and capacitance responses were considered. The proposed OTA showed a very good results with a voltage gain of 69.5 dB and a gain–bandwidth product (GBW) of 724 MHz. After that, a comparison among OTAs using different technologies was performed, showing that although the OTA designed with omega gate nanowire does not reach the same voltage gain of one designed with nanosheets, the proposed OTA shows a better GBW and smaller compensation capacitor for the same load capacitance. Considering the complexity of the nanosheet manufacture and the cost, the OTA designed with W-gate nanowire appears as a promising solution to replace FinFETs in the future.

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Section: Introductionmentioning

confidence: 99%

“…The images of omega-gate nanowire SOI MOSFET reported in (2) is presented in figure 1. The omega gate structure promotes a better gate to channel electrostatic coupling to this device than the FinFET one, resulting in a greater immunity to short channel effects (2,3).…”

Section: Introductionmentioning

confidence: 99%