Introduction

Colinge, Jean–Pierre

doi:10.1007/978-1-4419-9106-5_1

“…Two-dimensional (2D) Si layers are key structures for realizing future CMOS devices, such as extremely thin silicon-on-insulator (ETSOI) and FinFET CMOS, 1,2) as well as Si photonic devices. [3][4][5] We experimentally demonstrated strong quantum confinement effects (QCEs) in the 2D-Si.…”

Section: Introductionmentioning

confidence: 99%

C-atom-induced bandgap modulation in two-dimensional (100) silicon carbon alloys

Mizuno

¹

,

Nagamine

²

,

Omata

³

et al. 2016

Jpn. J. Appl. Phys.

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We experimentally studied the effects of the C atom on bandgap E G modulation in two-dimensional (2D) silicon carbon alloys, Si 1%Y C Y , fabricated by hot C + ion implantation into the (100) SOI substrate in a wide range of Y (4 ' 10 %5 : Y : 0.13), in comparison with the characteristics of 3D silicon carbide (SiC). X-ray photoelectron spectroscopy (XPS) and UV-Raman analysis confirm the Si-C, CC , and Si-Si bonds in the 2D-Si 1%Y C Y layer. The photoluminescence (PL) method shows that the E G and PL intensity I PL of 2D-Si 1%Y C Y drastically increase with increasing Y for high Y (;0.005), and thus we demonstrated a high E G of 2.5 eV and a visible wavelength λ PL less than 500 nm. Even for low Y (<10 %3), I PL of 2D-Si 1%Y C Y also increases with increasing Y, owing to the compressive strain of the 2D-Si 1%Y C Y layer caused by the C atoms, but the Y dependence of E G is very small. E G of 2D-Si 1%Y C Y can be controlled by changing Y. Thus, the 2D-Si 1%Y C Y technique is very promising for new E G engineering of future high-performance CMOS and Si photonics.

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“…Two-dimensional (2D) Si layers are key structures for realizing future CMOS devices, such as extremely thin silicon-on-insulator (ETSOI) and FinFET CMOS, 1,2) as well as Si photonic devices. [3][4][5] We experimentally demonstrated strong quantum confinement effects (QCEs) in 2D-Si, [6][7][8][9][10][11] such as phonon confinement effects (PCEs) [12][13][14][15][16] and the QCEs of 2D electrons.…”

Section: Introductionmentioning

confidence: 99%

Material structure of two-/three-dimensional Si–C layers fabricated by hot-C⁺-ion implantation into Si-on-insulator substrate

Mizuno

¹

,

Omata

²

,

Nagamine

³

et al. 2017

Jpn. J. Appl. Phys.

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We experimentally studied the material structures of two-/three-dimensional (2D/3D) silicon carbon layers Si1−YCY with Y ≤ 0.25 and 5 ≤ NL ≤ 162 [NL is the atomic layer number of Si1−YCY)] on buried oxide (BOX), which were fabricated by hot-C+-ion implantation into a (100) silicon-on-insulator (SOI) substrate before an oxidation process. A 2D Si layer was also fabricated as a reference. The C 1s spectrum obtained by X-ray photoemission spectroscopy shows that the implanted C atoms segregate at the oxide interface. Using a scanning transmission electron microscope and a high-resolution scanning transmission electron microscope to observe cross sections of Si0.75C0.25 layers, 2-nm-thick 3C-SiC layers were found be partially formed in the C segregation layer near the BOX interface. At Y > 0.1 and 5 ≤ NL ≤ 162, we observed very strong photoluminescence (PL) emission in the UV/visible regions from a 3C-SiC area and a Si1−YCY area in the C segregation layer, whereas a 2D Si emitted weak PL photons only at NL < 10. Thus, the silicon carbon technique is very promising for Si photonics and bandgap engineering in CMOS.

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“…Two-dimensional (2D) Si layers are key structures for realizing future CMOS devices, such as extremely thin silicon-on-insulator (ETSOI) and FinFET CMOS, 1,2) as well as Si photonic devices. [3][4][5] We experimentally demonstrated strong quantum confinement effects (QCEs) in 2D-Si layers.…”

Section: Introductionmentioning

confidence: 99%

Experimental study on interface region of two-dimensional Si layers by forming gas annealing

Mizuno

¹

,

Suzuki

²

,

Kikuchi

³

et al. 2016

Jpn. J. Appl. Phys.

0

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We experimentally studied the SiO2/Si and Si/buried oxide (BOX) interface regions of a two-dimensional (2D) Si layer, by forming gas annealing (FGA). A photoluminescence (PL) result measured at various lattice temperature, T L, values shows that the PL intensity I PL of the 2D-Si layer rapidly increases and then saturates with increasing FGA temperature, T A, and time, t A. I PL also increases with decreasing T L. A one-dimensional (1D) Schroedinger equation simulator indicates that some of the electrons in the 2D-Si layer generated by a PL excitation laser are quantum–mechanically transmitted into Si interface regions. Actually, we experimentally confirmed that the PL spectra of the 2D-Si layer can be fitted by the PL emission from two regions with different PL peak photon energy values, E PH, which consist of a typical 2D-Si and the interface regions of both the surface SiO2/Si and Si/BOX. Thus, this forming gas dependence is probably attributable to the improved lifetime τ of electrons in the surface interface region, because the Si surface is terminated by H atoms. Moreover, the E PH of the interface region is higher than that of the 2D-Si layer, because of the graded increased bandgap in the interface regions. However, the E PH of 2D-Si is independent of both T A and T L, and this T L independence does not agree with that of a 3D-Si layer. Consequently, we experimentally verified the larger impact of the Si interface on the performance of 2D-Si layer.

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Introduction

Cited by 13 publications

References 4 publications

C-atom-induced bandgap modulation in two-dimensional (100) silicon carbon alloys

C-atom-induced bandgap modulation in two-dimensional (100) silicon carbon alloys

Material structure of two-/three-dimensional Si–C layers fabricated by hot-C⁺-ion implantation into Si-on-insulator substrate

Experimental study on interface region of two-dimensional Si layers by forming gas annealing

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Introduction

Cited by 13 publications

References 4 publications

C-atom-induced bandgap modulation in two-dimensional (100) silicon carbon alloys

C-atom-induced bandgap modulation in two-dimensional (100) silicon carbon alloys

Material structure of two-/three-dimensional Si–C layers fabricated by hot-C+-ion implantation into Si-on-insulator substrate

Experimental study on interface region of two-dimensional Si layers by forming gas annealing

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Product

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Material structure of two-/three-dimensional Si–C layers fabricated by hot-C⁺-ion implantation into Si-on-insulator substrate