Introduction

Baliga, B. Jayant

doi:10.1007/978-1-4614-0269-5_1

Advanced High Voltage Power Device Concepts 2011

DOI: 10.1007/978-1-4614-0269-5_1

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Introduction

B. Jayant Baliga

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Cited by 2 publications

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SiC/GaN power semiconductor devices: a theoretical comparison and experimental evaluation under different switching conditions

Evans

Johnson

2018

IET Electrical Systems in Transportation

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This study is for special section 'Design, modelling and control of electric drives for transportation applications') The conduction and switching losses of silicon carbide (SIC) and gallium nitride (GaN) power transistors are compared in this study. Voltage rating of commercial GaN power transistors is <650 V, whereas that of SiC power transistors is <1200 V. This study begins with a theoretical analysis that examines how the characteristics of a 1200 V SiC metal-oxide-semiconductor field-effect transistor (MOSFET) change if device design is re-optimised for 600 V blocking voltage. Afterwards, a range of commercial devices [1200 V SIC junction gate FET, 1200 V SiCMOSFET, 650 V SiC-MOSFET and 650 V GaN high-electron-mobility transistor (HEMT)] with the same current rating are characterised and their conduction losses, inter-electrode capacitances and switching energy E sw are compared, where it is shown that GaN-HEMT has smaller conduction and switching losses than SiC devices. Finally, a zero-voltage switching circuit is used to evaluate all the devices, where device only produces turn-OFF switching losses and it is shown that GaN-HEMT has less switching losses than SiC device in this soft switching mode. It is also shown in this study that 1200 V SiC-MOSFET has smaller conduction and switching losses than 650 V SiC-MOSFET.

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SiC/GaN power semiconductor devices: a theoretical comparison and experimental evaluation under different switching conditions

Evans

Johnson

2018

IET Electrical Systems in Transportation

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Human body model electrostatic discharge tester using metal oxide semiconductor‐controlled thyristors

Jung

Park

Kim³

et al. 2022

ETRI Journal

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Electrostatic discharge (ESD) testing for human body model tests is an essential part of the reliability evaluation of electronic/electrical devices and components. However, global environmental concerns have called for the need to replace the mercury-wetted relay switches, which have been used in ESD testers. Therefore, herein, we propose an ESD tester using metal oxide semiconductor-controlled thyristor (MCT) devices with a significantly higher rising rate of anode current (di/dt) characteristics. These MCTs, which have a breakdown voltage beyond 3000 V, were developed through an in-house foundry. As a replacement for the existing mercury relays, the proposed ESD tester with the developed MCT satisfies all the requirements stipulated in the JS-001 standard for conditions at or below 2000 V. Moreover, unlike traditional relays, the proposed ESD tester does not generate resonance; therefore, no additional circuitry is required for resonant removal. To the best of our knowledge, the proposed ESD tester is the first study to meet the JS-001 specification by applying a new switch instead of an existing mercury-wetted relay.K E Y W O R D S electrostatic discharge tester, high rate of rising of anode current (di/dt), human body model, mercury-wetted relay, metal oxide semiconductor-controlled thyristor

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Introduction

Cited by 2 publications

References 19 publications

SiC/GaN power semiconductor devices: a theoretical comparison and experimental evaluation under different switching conditions

SiC/GaN power semiconductor devices: a theoretical comparison and experimental evaluation under different switching conditions

Human body model electrostatic discharge tester using metal oxide semiconductor‐controlled thyristors

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