Introduction to Magnetic Oxides

Coey, J. M. D.; Venkatesan, M.; Xu, Hongjun

doi:10.1002/9783527654864.ch1

Cited by 19 publications

(15 citation statements)

References 85 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…The prerequisite for ferromagnetic superexchange is a $90 TM-O-TM angle which stabilizes the ferromagnetic coupling through p TM-O bonds in TM-O-TM trimer. 31 The octahedral distortions in these compounds orient the TM-O-TM angles in these compounds to $90 . Under perfect R 3m symmetry, as shown in Fig.…”

Section: Magnetic Couplingmentioning

confidence: 99%

The effect of octahedral distortions on the electronic properties and magnetic interactions in O3 NaTMO₂ compounds (TM = Ti–Ni & Zr–Pd)

Assadi

Shigeta

2018

RSC Adv.

View full text Add to dashboard Cite

show abstract

Section: Magnetic Couplingmentioning

confidence: 99%

The effect of octahedral distortions on the electronic properties and magnetic interactions in O3 NaTMO₂ compounds (TM = Ti–Ni & Zr–Pd)

Assadi

Shigeta

2018

RSC Adv.

View full text Add to dashboard Cite

show abstract

“…The appearance of conductivity in the hallmark interface between LaAlO 3 and SrTiO 3 has been explained as a result of stacking polar layers of LaAlO 3 thus accumulating potential energy [16][17][18][19][20]. According to these scenario one expects the two interfaces presented in Figure 2 to have carriers of opposite signs as explained in this figure.…”

Section: Fig 2: (Color Online)mentioning

confidence: 85%

Solution Monolayer Epitaxy for Tunable Atomically Sharp Oxide Interfaces

Ron

Hevroni

Maniv

et al. 2017

Adv Materials Inter

View full text Add to dashboard Cite

Epitaxial growth of atomically-sharp interfaces serves as one of the main building blocks of nanofabrication. Such interfaces are crucial for the operation of various devices including transistors, photo-voltaic cells, and memory components. In order to avoid charge traps that may hamper the operation of such devices, it is critical for the layers to be atomically-sharp. Fabrication of atomically sharp interfaces normally requires ultra-high vacuum techniques and high substrate temperatures. We present here a new self-limiting wet chemical process for deposition of epitaxial layers from alkoxide precursors. This method is fast, cheap, and yields perfect interfaces as we validate by various analysis techniques. It allows the design of heterostructures with half-unit cell resolution. We demonstrate our method by designing hole-type oxide interfaces SrTiO3/BaO/LaAlO3. We show that transport through this interface exhibits properties of mixed electron-hole contributions with hole mobility exceeding that of electrons. Our method and results are an important step forward towards a controllable design of a p-type oxide interface.Growth methods of epitaxial thin films can be roughly categorized as physical and chemical. While physical methods (i.e. molecular beam epitaxy, pulsed laser deposition (PLD) [1]) are based on creating a beam of the film material and transporting it in vacuum onto the substrate. Chemical methods such as: chemical vapor deposition and atomic layer deposition (ALD) use a chemical precursor, a compound containing the film growth material. The precursor is transferred in vacuum onto the substrate, where the surface catalyzes the precursor dissociation reaction, and the deposition of the film. While giving very good results for film growth, these methods lack the versatility and become increasingly complex [2] when a wide variety of surface monolayers is required. In Solution monolayer epitaxy (SoME) the substrate of choice, in this case a (100) TiO 2 terminated SrTiO 3 , is submersed in a solution of a dissolved precursor of choice, at a temperature slightly lower than its decomposition temperature. Under these conditions the precursor molecules do not decompose in the solution unless they are in close proximity to the surface of the substrate, which catalyzes the decomposition of the precursor and the required material resulting in a monolayer.In our case SoME is used to grow a BaO monolayer (termination) on a SrTiO 3 substrate as described in Figure 1. We then grow an additional epitaxial layer of LaAlO 3 using traditional pulsed laser deposition, givarXiv:1710.04216v1 [cond-mat.str-el]

show abstract

“…(11). Since the Ni 2+ ion has S = 1 and L = 3 with J = 4 [71,94], we therefore fitted the magnetization curves ( Fig. 12) of Ni 1−x Zn x O/ Ni and NiO samples to J = 4 and our data nicely fitted to Eq.…”

Section: Magnetic Propertiesmentioning

confidence: 92%

Structural, optical and magnetic properties of Ni1−xZnxO/Ni nanocomposite

et al. 2019

View full text Add to dashboard Cite

Ni 1−x Zn x O/Ni nanocomposite samples synthesized by wet chemical method were characterized by X-ray powder diffraction, Fourier Transform Infrared (FTIR) spectrometer, UV-Vis spectrometer and Nine Tesla Physical Property Measurement System (PPMS)-based vibrating sample magnetometer (VSM). XRD spectra contained peaks due to NiO and Ni. Rietveld refinement of XRD data indicated the change in lattice parameter is more than twice in NiO than in Ni suggests that Zn goes more favorably into NiO than in Ni. The band gap of NiO in Ni 1−x Zn x O/Ni samples increased from 3.58 to 3.81 eV with increasing x from 0 to 0.07 and thereafter the band gap slightly decreases. NiO/Ni nanocomposites show strong room temperature ferromagnetism. The ferromagnetic interaction further enhanced with 1% of Zn doping into NiO in NiO/Ni nanocomposite. Beyond this doping concentration, the magnetic interaction does not show any systematic variation. The observation of room temperature ferromagnetism in nanocomposite samples is explained by combining the effect of bound magnetic polaron and the magnetization of system with the distribution of magnetic ions as meagerly dispersed in large clusters. Our study indicated that Ni 0.99 Zn 0.01 O/Ni nanocomposite sample could be useful for magnetic recording device application.

show abstract

Introduction to Magnetic Oxides

Cited by 19 publications

References 85 publications

The effect of octahedral distortions on the electronic properties and magnetic interactions in O3 NaTMO₂ compounds (TM = Ti–Ni & Zr–Pd)

The effect of octahedral distortions on the electronic properties and magnetic interactions in O3 NaTMO₂ compounds (TM = Ti–Ni & Zr–Pd)

Solution Monolayer Epitaxy for Tunable Atomically Sharp Oxide Interfaces

Structural, optical and magnetic properties of Ni1−xZnxO/Ni nanocomposite

Contact Info

Product

Resources

About

Introduction to Magnetic Oxides

Cited by 19 publications

References 85 publications

The effect of octahedral distortions on the electronic properties and magnetic interactions in O3 NaTMO2 compounds (TM = Ti–Ni & Zr–Pd)

The effect of octahedral distortions on the electronic properties and magnetic interactions in O3 NaTMO2 compounds (TM = Ti–Ni & Zr–Pd)

Solution Monolayer Epitaxy for Tunable Atomically Sharp Oxide Interfaces

Structural, optical and magnetic properties of Ni1−xZnxO/Ni nanocomposite

Contact Info

Product

Resources

About

The effect of octahedral distortions on the electronic properties and magnetic interactions in O3 NaTMO₂ compounds (TM = Ti–Ni & Zr–Pd)

The effect of octahedral distortions on the electronic properties and magnetic interactions in O3 NaTMO₂ compounds (TM = Ti–Ni & Zr–Pd)