Introduction to the micro/nano-fabrication of modern vacuum electronic devices

She, Juncong; Huang, Zhizhen; Huang, Yao‐Zeng; Huang, Zhijun; Deng, Shaozhi; Xu, Ning

doi:10.1109/ivnc.2017.8051528

Cited by 3 publications

(5 citation statements)

References 14 publications

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“…The first demonstration, to our knowledge, of field emission transistor in ambient conditions was by Driskill et al in 1997 without further progress due to fabrication challenges . The concept resurged recently due to advances in nanofabrication techniques . Conventional design of field emission in air medium is sharp emitter tips in vertical orientation with collector and gate. ,, A new way of cylindrical or rectangular vertical air channel for transistor was proposed recently. − Unfortunately, although it is superior in performance, vertical designs are not practical for circuit implementation and integration with conventional MOSFETs.…”

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confidence: 99%

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Metal–Air Transistors: Semiconductor-Free Field-Emission Air-Channel Nanoelectronics

et al. 2018

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Scattering-free transport in vacuum tubes has always been superior to solid-state transistors. It is the advanced fabrication with mass production capability at low cost which drove solid-state nanoelectronics. Here, we combine the best of vacuum tubes with advanced nanofabrication technology. We present nanoscale, metal-based, field emission air channel transistors. Comparative analysis of tungsten-, gold-, and platinum-based devices is presented. Devices are fabricated with electron beam lithography, achieving channel lengths less than 35 nm. With this small channel length, vacuum-like carrier transport is possible in air under room temperature and pressure. Source and drain electrodes have planar, symmetric, and sharp geometry. Because of this, devices operate in bidirection with voltages <2 V and current values in few tens of nanoamperes range. The experimental data shows that influential operation mechanism is Fowler–Nordheim tunnelling in tungsten and gold devices, while Schottky emission in platinum device. The presented work enables a technology where metal-based switchable nanoelectronics can be created on any dielectric surface with low energy requirements.

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confidence: 99%

“…8 The concept resurged recently due to advances in nanofabrication techniques. 13 Conventional design of field emission in air medium is sharp emitter tips in vertical orientation with collector and gate. 3,14,15 A new way of cylindrical or rectangular vertical air channel for transistor was proposed recently.…”

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confidence: 99%

Metal–Air Transistors: Semiconductor-Free Field-Emission Air-Channel Nanoelectronics

et al. 2018

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“…When comparing Figures 8 and 10, it can be observed that the anode potential has a more pronounced effect on the dependence of I C (U G ) for the FIB microtriode. The local electric field strength near the cathode can be estimated using Equation (2), where the electric field strength is the product of the applied voltage and the field enhancement factor. The latter is inversely proportional to the slope according to Equation (5).…”

Section: Resultsmentioning

confidence: 99%

“…The Fowler-Nordheim equation was used to describe the relationship between the emission current density and the electric field strength. The analysis also showed that in the case of the FIB microtriodes, The local electric field strength near the cathode can be estimated using Equation (2), where the electric field strength is the product of the applied voltage and the field enhancement factor. The latter is inversely proportional to the slope according to Equation (5).…”

Section: Discussionmentioning

confidence: 99%

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Tungsten–SiO2–Based Planar Field Emission Microtriodes with Different Electrode Topologies

Avotina,

Bikse,

Dekhtyar

et al. 2023

Materials

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This study examines the electrical properties and layer quality of field emission microtriodes that have planar electrode geometry and are based on tungsten (W) and silicon dioxide (SiO2). Two types of microtriodes were analyzed: one with a multi-tip cathode fabricated using photolithography (PL) and the other with a single-tip cathode fabricated using a focused ion beam (FIB). Atomic force microscopy (AFM) analysis revealed surface roughness of the W layer in the order of several nanometers (Ra = 3.8 ± 0.5 nm). The work function values of the Si substrate, SiO2 layer, and W layer were estimated using low-energy ultraviolet photoelectron emission (PE) spectroscopy and were 4.71 eV, 4.85 eV, and 4.67 eV, respectively. The homogeneity of the W layer and the absence of oxygen and silicon impurities were confirmed via X-ray photoelectron spectroscopy (XPS). The PL microtriode and the FIB microtriode exhibited turn-on voltages of 110 V and 50 V, respectively, both demonstrating a field emission current of 0.4 nA. The FIB microtriode showed significantly improved field emission efficiency compared to the PL microtriode, attributed to a higher local electric field near the cathode.

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Investigation of the current level instability of the multitip field emitters with computerized field emission projector

Kolosko

Filippov

Popov

et al. 2020

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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This work represents a new approach for analyzing emission characteristics of multitip field cathodes. The approach is based on using a computerized field emission projector to investigate the behavior of the microscopic emission sites of the field cathode surface. Adsorption-desorption processes on the surface—which influence the emission current level—were investigated by tracking the individual emission sites under conditions of a sharp decrease and increase in the voltage level. An analysis of the transient process showed that emission sites with highest local currents almost do not participate in changing the overall level of emission current, but they became smaller with a decrease in the step voltage contribution of the dimmest sites. Similar dependences were obtained for rising voltage levels but with much faster transitions.

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Introduction to the micro/nano-fabrication of modern vacuum electronic devices

Cited by 3 publications

References 14 publications

Metal–Air Transistors: Semiconductor-Free Field-Emission Air-Channel Nanoelectronics

Metal–Air Transistors: Semiconductor-Free Field-Emission Air-Channel Nanoelectronics

Tungsten–SiO2–Based Planar Field Emission Microtriodes with Different Electrode Topologies

Investigation of the current level instability of the multitip field emitters with computerized field emission projector

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