1998
DOI: 10.1016/s0026-2714(97)00050-4
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INTRODUCTORY INVITED PAPERFailure mechanisms due to metallurgical interactions in commercially available AlGaAs/GaAs and AlGaAs/InGaAs HEMTs

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Cited by 13 publications
(6 citation statements)
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“…Au based contacts have proven to be a significant reliability issue at elevated temperatures in GaAs and InGaAs based HEMTs (17). In AlGaN/GaN based HEMTs, ohmic contacts with standard Au-based metallization seem to warrant sufficient stability under elevated temperature life-testing (18).…”
Section: Ohmic Contact Reliabilitymentioning
confidence: 99%
“…Au based contacts have proven to be a significant reliability issue at elevated temperatures in GaAs and InGaAs based HEMTs (17). In AlGaN/GaN based HEMTs, ohmic contacts with standard Au-based metallization seem to warrant sufficient stability under elevated temperature life-testing (18).…”
Section: Ohmic Contact Reliabilitymentioning
confidence: 99%
“…[1][2][3][4][5] In spite of the extraordinary material properties of the AlGaN/GaN heterostructure system, such as high mobility, high saturation velocity and good thermal conductivity, the main impediment of this technology is lack of reliability. 12 To date, Ni/Au gate metallization has been the most widely used in AlGaN/GaN HEMTs reliability studies. They are hotelectron-induced trap degradation, 6 crystallographic-defect formation through the inverse piezoelectric effect, [7][8][9] electric-field driven mechanism under off-state conditions, 10 gate sinking 11 and Ohmic contact degradation.…”
Section: Introductionmentioning
confidence: 99%
“…First, the lateral diffused metal will immerse in Schottky barrier region (i.e., InAlAs layers) and therefore increase the reverse gate leakage current [16,17]. Second, thermal activation metal-metal and metal-semiconductor interdiffusions lead to Ohmic contact degradation [18]. The degradation of Ohmic contact is the result of Ga out-diffusion into the top Au layer and the diffusion of Au into the GaAs.…”
Section: Methodsmentioning
confidence: 99%