The sensitivity of InGaAsP/InP buried crescent lasers to ESD phenomena was deeply analysed, starting from the need to explain and prevent sudden failures during equipment manufacturing and test. Failure analysis allowed us to localize the degradation, which can be explained by means of a simple phenomenological model; finally a physical model was implemented trying to correlate the results of the failure analysis with the proposed failure mechanism.

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Light emission in submicrometer gate AIGaAs/GaAs HEMT's and GaAs MESFET's has been observed at high drain bias values (> 4.0 V). The spectral distribution of the emitted photons in the 1.7-2.9-eV range does not correspond to a simple Maxwellian distribution function of the electron energies in the channel. Light emission is observed in correspondence with nonnegligible gate and substrate hole currents, due to the collection of holes generated by impact ionization.

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