Inverse bilayer magnetoelectric thin film sensor

Yarar, E.; Salzer, Sebastian; Hrkac, Viktor; Piorra, A.; Höft, Michael; Knöchel, R.; Kienle, Lorenz; Quandt, Eckhard

doi:10.1063/1.4958728

Cited by 73 publications

(52 citation statements)

References 22 publications

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“…This a very promising result for a wide application range, particularly for ME sensors where the noise voltage density is proportional to tan δ of the piezoelectric layer. 34,35 Accordingly, a maximum SNR of (94 ± 17) · 10 5 Pa 1/2 can be calculated for 2 µm thick samples. 23 Relative permittivity evaluates a material's ability to transmit an applied electrical field across its width.…”

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confidence: 99%

Low temperature aluminum nitride thin films for sensory applications

et al. 2016

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A low-temperature sputter deposition process for the synthesis of aluminum nitride (AlN) thin films that is attractive for applications with a limited temperature budget is presented. Influence of the reactive gas concentration, plasma treatment of the nucleation surface and film thickness on the microstructural, piezoelectric and dielectric properties of AlN is investigated. An improved crystal quality with respect to the increased film thickness was observed; where full width at half maximum (FWHM) of the AlN films decreased from 2.88 ± 0.16° down to 1.25 ± 0.07° and the effective longitudinal piezoelectric coefficient (d33,f) increased from 2.30 ± 0.32 pm/V up to 5.57 ± 0.34 pm/V for film thicknesses in the range of 30 nm to 2 μm. Dielectric loss angle (tan δ) decreased from 0.626% ± 0.005% to 0.025% ± 0.011% for the same thickness range. The average relative permittivity (εr) was calculated as 10.4 ± 0.05. An almost constant transversal piezoelectric coefficient (|e31,f|) of 1.39 ± 0.01 C/m2 was measured for samples in the range of 0.5 μm to 2 μm. Transmission electron microscopy (TEM) investigations performed on thin (100 nm) and thick (1.6 μm) films revealed an (002) oriented AlN nucleation and growth starting directly from the AlN-Pt interface independent of the film thickness and exhibit comparable quality with the state-of-the-art AlN thin films sputtered at much higher substrate temperatures.

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confidence: 99%

Low temperature aluminum nitride thin films for sensory applications

et al. 2016

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“…One of the promising candidates for implementation in point-of-care and biomagnetic signal-sensing devices are magnetoelectric magnetic field sensors [91]. At room temperature, these sensors can achieve a detection limit of about 1-10 pT/ √ Hz [22,92] for frequencies lower than 100 Hz, and this is enough for most biomedical measurements. The sensing element of such sensors is the magnetoelectric composite consisting of a magnetostrictive material which is mechanically coupled with the piezoelectric one or from single-phase multiferroic material [93,94].…”

Section: Magnetoelectric Magnetometersmentioning

confidence: 99%

Ultrasensitive Magnetic Field Sensors for Biomedical Applications

Murzin

Mapps

Levada

et al. 2020

Sensors

169

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The development of magnetic field sensors for biomedical applications primarily focuses on equivalent magnetic noise reduction or overall design improvement in order to make them smaller and cheaper while keeping the required values of a limit of detection. One of the cutting-edge topics today is the use of magnetic field sensors for applications such as magnetocardiography, magnetotomography, magnetomyography, magnetoneurography, or their application in point-of-care devices. This introductory review focuses on modern magnetic field sensors suitable for biomedicine applications from a physical point of view and provides an overview of recent studies in this field. Types of magnetic field sensors include direct current superconducting quantum interference devices, search coil, fluxgate, magnetoelectric, giant magneto-impedance, anisotropic/giant/tunneling magnetoresistance, optically pumped, cavity optomechanical, Hall effect, magnetoelastic, spin wave interferometry, and those based on the behavior of nitrogen-vacancy centers in the atomic lattice of diamond.

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“…Several types of integrated multiferroic devices based on thin-film ME heterostructures including ME sensors [18,63,[67][68][69][70][71], inductors [35], filters [32] and antennas [43,72,73] are presented in this section. Based on the direct ME effect, a giant ME coefficient (α ME ) as high as 5kV/cm Oe was obtained by the direct deposition of FeCoSiB on Si substrate with a Si/SiO 2 /Pt/ AlN/FeCoSiB layer stack [71]. The high quality of AlN and FeCoSiB films allows the enhancement of limit of detection (LoD) to be an extremely low value of 400 f T/Hz 1/2 at the mechanical resonance frequency of 867 Hz.…”

Section: Magnetoelectric Applicationsmentioning

confidence: 99%

A Review of Thin-Film Magnetoelastic Materials for Magnetoelectric Applications

Liang

Dong

Chen

et al. 2020

Sensors

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Since the revival of multiferroic laminates with giant magnetoelectric (ME) coefficients, a variety of multifunctional ME devices, such as sensor, inductor, filter, antenna etc. have been developed. Magnetoelastic materials, which couple the magnetization and strain together, have recently attracted ever-increasing attention due to their key roles in ME applications. This review starts with a brief introduction to the early research efforts in the field of multiferroic materials and moves to the recent work on magnetoelectric coupling and their applications based on both bulk and thin-film materials. This is followed by sections summarizing historical works and solving the challenges specific to the fabrication and characterization of magnetoelastic materials with large magnetostriction constants. After presenting the magnetostrictive thin films and their static and dynamic properties, we review micro-electromechanical systems (MEMS) and bulk devices utilizing ME effect. Finally, some open questions and future application directions where the community could head for magnetoelastic materials will be discussed.

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Inverse bilayer magnetoelectric thin film sensor

Cited by 73 publications

References 22 publications

Low temperature aluminum nitride thin films for sensory applications

Low temperature aluminum nitride thin films for sensory applications

Ultrasensitive Magnetic Field Sensors for Biomedical Applications

A Review of Thin-Film Magnetoelastic Materials for Magnetoelectric Applications

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