Prior investigations on magnetoelectric (ME) thin film sensors using amorphous FeCoSiB as a magnetostrictive layer and AlN as a piezoelectric layer revealed a limit of detection (LOD) in the range of a few pT/Hz1/2 in the mechanical resonance. These sensors are comprised of a Si/SiO2/Pt/AlN/FeCoSiB layer stack, as dictated by the temperatures required for the deposition of the layers. A low temperature deposition route of very high quality AlN allows the reversal of the deposition sequence, thus allowing the amorphous FeCoSiB to be deposited on the very smooth Si substrate. As a consequence, the LOD could be enhanced by almost an order of magnitude reaching 400 fT/Hz1/2 at the mechanical resonance of the sensor. Giant ME coefficients (αME) as high as 5 kV/cm Oe were measured. Transmission electron microscopy investigations revealed highly c-axis oriented growth of the AlN starting from the Pt-AlN interface with local epitaxy.

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Magnetoelectric thin film composites have demonstrated their potential to detect sub-pT magnetic fields if mechanical resonances (typically few hundred Hz to a few kHz) are utilized. At low frequencies (1–100 Hz), magnetic field-induced frequency conversion has enabled wideband measurements with resonance-enhanced sensitivities by using the nonlinear characteristics of the magnetostriction curve. Nevertheless, the modulation with a magnetic field with a frequency close to the mechanical resonance results in a number of drawbacks, which are, e.g., size and energy consumption of the sensor as well as potential crosstalk in sensor arrays. In this work, we demonstrate the feasibility of an electric frequency conversion of a magnetoelectric sensor which would overcome the drawbacks of magnetic frequency conversion. This magnetoelectric sensor consists of three functional layers: an exchange biased magnetostrictive multilayer showing a high piezomagnetic coefficient without applying a magnetic bias field, a non-linear piezoelectric actuation layer and a linear piezoelectric sensing layer. In this approach, the low frequency magnetic signal is shifted into the mechanical resonance of the sensor, while the electric modulation frequency is chosen to be either the difference or the sum of the resonance and the signal frequency. Using this electric frequency conversion, a limit of detection in the low nT/Hz1/2 range was shown for signals of low frequency.

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