Inverse spin Hall effect in a closed loop circuit

Omori, Yasutomo; Auvray, Florent; Wakamura, Taro; Niimi, Yasuhiro; Fert, A.; Otani, Y.

doi:10.1063/1.4884520

Cited by 17 publications

(15 citation statements)

References 21 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…A unique feature of the QHE in TIs is that the top and bottom surfaces, where LLs are formed, are connected by side surfaces, where Weyl fermions form edge channels, as contrasted to conventional quantum Hall bilayers and the ν = 0 QHE in graphene. In the proposed spin transport experiment, the voltage V 3 is expected to be on the order of 10 nV as measured in an experiment of ISHE [26]. The spin conversion rate is typically 0.1 ∼ 1 % under the electric field E y ≃ 1 kV/cm, when electric current of a few mA flows in a 1 mm sample [16].…”

Section: Introduction -mentioning

confidence: 96%

Charge and Spin Transport in Edge Channels of aν=0Quantum Hall System on the Surface of Topological Insulators

2015

View full text Add to dashboard Cite

Three-dimensional topological insulators of finite thickness can show the quantum Hall effect (QHE) at the filling factor ν = 0 under an external magnetic field if there is a finite potential difference between the top and bottom surfaces. We calculate energy spectra of surface Weyl fermions in the ν = 0 QHE and find that gapped edge states with helical spin structure are formed from Weyl fermions on the side surfaces under certain conditions. These edge channels account for the nonlocal charge transport in the ν = 0 QHE which is observed in a recent experiment on (Bi1−xSbx)2Te3 films. The edge channels also support spin transport due to the spin-momentum locking. We propose an experimental setup to observe various spintronics functions such as spin transport and spin conversion.Introduction -The quantum Hall effect (QHE) is a representative topological quantum phenomenon where edge channels play an essential role in low-energy transport [1,2]. The emergence of gapless edge channels is closely tied to nontrivial topology of gapped electronic states in the bulk, which is the property called bulk-edge correspondence. For topological insulators (TIs) [3,4], the bulk-edge correspondence dictates that any surface of a three-dimensional (3D) TI with a nontrivial Z 2 index has a single (or an odd number of) flavor(s) of Weyl fermions with spin-momentum locking. The surface Weyl fermions are predicted to give a variety of novel phenomena such as the quantized topological magneto-electric (ME) effect [5] and monopole-like magnetic field distribution induced by a point charge [6]. Another remarkable phenomenon is the quantized anomalous Hall effect without an external magnetic field [7][8][9][10]. By contrast, in an external magnetic field, a single flavor of Weyl fermions are expected to show a "half-integer" QHE with the Hall conductance σ xy = (n +

show abstract

Section: Introduction -mentioning

confidence: 96%

Charge and Spin Transport in Edge Channels of aν=0Quantum Hall System on the Surface of Topological Insulators

2015

View full text Add to dashboard Cite

show abstract

“…The presence of a spin-current was found in a great diversity of systems and situations [5,7,9,15,16]. The conditions for its existence is an open problem crucial in the energetics of the system since that current, in contrast to spin-accumulation, entails heat dissipation.…”

Section: Introductionmentioning

confidence: 99%

Conditions for the generation of spin and charge currents in bulk spin Hall devices

Wegrowe¹,

Benda²,

Rubı́³

2017

EPL

View full text Add to dashboard Cite

We investigate the out-of-equilibrium stationary states of spin-Hall devices on the basis of the least dissipation principle. We show that, for a bulk paramagnet with spin-orbit interaction, in the case of the Hall bar geometry the principle of minimum dissipated power prevents the generation of transverse spin and charge currents while in the case of the Corbino disk geometry, transverse currents can be produced. More generally, we show that electric charge accumulation prevents the stationary spin to charge current conversion.

show abstract

“…Early experiments reported a subnanometer λ IR , but more recent works have shown giant values above 5 nm [23]- [25]. We note also that the bulk inverse spin Hall effect or a topological insulator could also be used and, to first order, would produce similar results [26], [27]. For this work, the precise spin-orbit mechanism at play is not critical.…”

Section: Inverse Spin-orbit Effectsmentioning

confidence: 68%

Performance Estimate of Inverse Rashba–Edelstein Magnetoelectric Devices for Neuromorphic Computing

Stephan

Koester

2019

IEEE J. Explor. Solid-State Comput. Devices Circuits

View full text Add to dashboard Cite

We propose a new design for a cellular neural network with spintronic neurons and CMOS-based synapses. Harnessing the magnetoelectric and inverse Rashba-Edelstein effects allows natural emulation of the behavior of an ideal cellular network. This combination of effects offers an increase in speed and efficiency over other spintronic neural networks. A rigorous performance analysis via simulation is provided.INDEX TERMS Cellular neural network (CNN), CMOS, energy efficiency, magnetoelectric (ME), Rashba-Edelstein, spintronics.

show abstract

Inverse spin Hall effect in a closed loop circuit

Cited by 17 publications

References 21 publications

Charge and Spin Transport in Edge Channels of aν=0Quantum Hall System on the Surface of Topological Insulators

Charge and Spin Transport in Edge Channels of aν=0Quantum Hall System on the Surface of Topological Insulators

Conditions for the generation of spin and charge currents in bulk spin Hall devices

Performance Estimate of Inverse Rashba–Edelstein Magnetoelectric Devices for Neuromorphic Computing

Contact Info

Product

Resources

About