2019
DOI: 10.1109/jxcdc.2019.2903286
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Performance Estimate of Inverse Rashba–Edelstein Magnetoelectric Devices for Neuromorphic Computing

Abstract: We propose a new design for a cellular neural network with spintronic neurons and CMOS-based synapses. Harnessing the magnetoelectric and inverse Rashba-Edelstein effects allows natural emulation of the behavior of an ideal cellular network. This combination of effects offers an increase in speed and efficiency over other spintronic neural networks. A rigorous performance analysis via simulation is provided.INDEX TERMS Cellular neural network (CNN), CMOS, energy efficiency, magnetoelectric (ME), Rashba-Edelste… Show more

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Cited by 6 publications
(16 citation statements)
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“…The inverse Rashba-Edelstein magnetoelectric neuron (IRMEN) has been thoroughly described, including its relationship to standard CeNN cells, in [10]. A brief summary will be given here.…”
Section: Irmen a Irmen Neuronsmentioning
confidence: 99%
See 3 more Smart Citations
“…The inverse Rashba-Edelstein magnetoelectric neuron (IRMEN) has been thoroughly described, including its relationship to standard CeNN cells, in [10]. A brief summary will be given here.…”
Section: Irmen a Irmen Neuronsmentioning
confidence: 99%
“…However, the capacitor represents an input mechanism rather than the true state. A magnetoelectric material within the capacitor is coupled to the ferromagnet (FM) that makes up one of its electrodes, thereby allowing control of the FM via electric charge on the capacitor [10], [12]- [14]. Readout is accomplished by driving a charge current first through the FM to spin-polarize the current and then through an inverse spin-orbit stack that transduces from spin current to charge potential along an axis orthogonal to both current flow and spin orientation [15]- [17].…”
Section: Irmen a Irmen Neuronsmentioning
confidence: 99%
See 2 more Smart Citations
“…Recently, multiple efforts have investigated the cellular neural network (CeNN) in the context of emerging information processing technologies. As representative examples, CeNNs based on graphene devices, spintronic devices, and tunnel FETs (TFETs) [16]- [22] have been studied. A variety of applications, such as noise filtering, associative memory, pattern recognition, tactile sensing, and image processing application engines have been considered [17]- [20].…”
Section: Introductionmentioning
confidence: 99%