Magneto-electric antiferromagnetic spin–orbit logic devices

Abstract

As electronic integrated circuits are scaled to ever smaller sizes, they run into the obstacle of excessive power dissipation. Spintronic devices hold the promise of alleviating this problem via improved energy efficiency. Research effort around a promising class of such devices based on antiferromagnetic materials and magnetoelectric switching is reviewed.

Physics-Based Models for Magneto-Electric Spin-Orbit Logic Circuits

“…To utilize the potential of spintronics for saving energy in computing, various logic devices have been proposed. Among them, devices involving magnetoelectric (ME) effects, such as MESO [10], [11] CoMET [12], ASFOR [13], and SOTFET [14], are expected to operate with a lower energy.…”

Nanomagnetic Boolean Logic—The Tempered (and Realistic) Vision

“…Since magnetic switches may be amenable to superior architectures because of their inherent non-volatility, their slowness may be (at least partially) offset by their compatibility with such architectures. Moreover, there is now significant research in antiferromagnetic switches which switch much faster than ferromagnetic switches [1] and they are capable of reaching the switching speed of a modern day transistor.…”

Antiferromagnetic Phase Induced by Nitrogen Doping in 2D Cr2S3

“…As the scaling process of traditional ferromagnet-based spin device reaches the end, interest has been fueled in the development of antiferromagnetic spintronics [ 1 , 2 , 3 ]. In contrast to ferromagnetic materials, antiferromagnets have exhibited many distinct advantages for information manipulation and storage including robust antiferromagnetic order, absence of stray fields, and teraHertz switching frequencies [ 4 , 5 , 6 ]. Recently, accompanied by the discovery of two-dimensional (2D) van der Waals (vdW) magnetic materials such as the ferromagnetic Cr 2 Ge 2 Te 6 insulator, ferromagnetic Fe 3 GeTe 2 metal, and intralayer-ferromagnetic (interlayer-antiferromagnetic) CrI 3 semiconductor [ 7 , 8 , 9 ], the 2D antiferromagnet has attracted tremendous attention for exploring ultrathin antiferromagnetic spintronic devices with advanced functionalities [ 10 , 11 , 12 ].…”