Inversion and accumulation layers at InN surfaces

Veal, T. D.; Piper, Louis F. J.; Schaff, W. J.; McConville, Christopher F

doi:10.1016/j.jcrysgro.2005.12.100

Cited by 38 publications

(27 citation statements)

References 29 publications

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“…The band bending V bb has been calculated from the relative surface and bulk Fermi level positions. The electron sheet density (electron accumulation) has been determined by space charge calculations using Poisson's equation [15] within the modified Thomas-Fermi approximation (MTFA) [16][17][18].…”

Section: Methodsmentioning

confidence: 99%

Structural, electrical and optical characterization of MOCVD grown In-rich InGaN layers

Tuna

Linhart

Луценко

et al. 2012

Journal of Crystal Growth

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Section: Methodsmentioning

confidence: 99%

Structural, electrical and optical characterization of MOCVD grown In-rich InGaN layers

Tuna

Linhart

Луценко

et al. 2012

Journal of Crystal Growth

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“…It was argued that the n-type inversion layer at the surface completely prevents direct electrical contact to the bulk interior because it is isolated from the p-type bulk material by a depletion region originating from the strong band bending. 3,4 Hence it makes impossible to see the contribution of free holes in the bulk to the transport properties of the sample and Hall measurements should give information about electron concentration and mobility in the n-type inversion layer only. 3,4 Such conclusion was also supported by very low electron mobilities found in Mg-doped samples in Hall measurements, as expected for surface inversion layer.…”

Section: Search For Free Holes In Inn:mg-interplay Between Surface Lamentioning

confidence: 99%

“…3,4 Hence it makes impossible to see the contribution of free holes in the bulk to the transport properties of the sample and Hall measurements should give information about electron concentration and mobility in the n-type inversion layer only. 3,4 Such conclusion was also supported by very low electron mobilities found in Mg-doped samples in Hall measurements, as expected for surface inversion layer. 3 Recently several groups reported the possibility of successful p-type doping of the bulk InN under n-type surface layer.…”

Section: Search For Free Holes In Inn:mg-interplay Between Surface Lamentioning

confidence: 99%

Search for free holes in InN:Mg-interplay between surface layer and Mg-acceptor doped interior

Dmowski

Baj

Suski

et al. 2009

Journal of Applied Physics

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We measured lateral ac transport (up to 20 MHz), thermopower, as well as resistivity and Hall effect in InN:Mg samples with various Mg content. The sign of the Hall effect for all the samples was negative (electrons), however, the thermopower (α) measurements have shown the p-type sign of α for moderate Mg content—in the window centered around 1×1019 cm−3. Further overdoping with Mg yields donor type of defects and the change of thermoelectric power sign. The ac measurements performed as a function of frequency revealed that in both samples exhibiting and nonexhibiting p-type sign of thermopower, the n-type inversion layer at the surface does not prevent the electric contact to the bulk layer. Therefore we conclude that the n-type Hall effect invariably reported for all the Mg-doped samples originates from electron domination in mobility-weighted contributions of both types of carriers.

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“…Similarly, thermopower increases with effective mass because increasing the mass increases the density of states, again increasing the Fermi-level/band-edge separation for a given carrier concentration. Both of these aspects favor detection of holes in the bulk rather than electrons at the surface of p-type InN since the electron concentration in the inversion layer is expected to be significantly larger than the bulk hole concentration and the hole effective mass in InN is predicted to be about 10 times larger than the electron effective mass [16].…”

Section: Introductionmentioning

confidence: 99%

Hole transport and photoluminescence in Mg-doped InN

Miller

Ager

Smith

et al. 2010

Journal of Applied Physics

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Hole conductivity and photoluminescence were studied in Mg-doped InN films grown by molecular beam epitaxy. Because surface electron accumulation interferes with carrier type determination by electrical measurements, the nature of the majority carriers in the bulk of the films was determined using thermopower measurements. Mg concentrations in a "window" from ca. 3 × 10 17 to 1 × 10 19 cm −3 produce hole-conducting, p-type films as evidenced by a positive Seebeck coefficient. This conclusion is supported by electrolyte-based capacitance voltage measurements and by changes in the overall mobility observed by Hall effect, both of which are consistent with a change from surface accumulation on an n-type film to surface inversion on a p-type film. The observed Seebeck coefficients are understood in terms of a parallel conduction model with contributions from surface and bulk regions. In partially compensated films with Mg concentrations below the window region, two peaks are observed in photoluminescence at 672 meV and at 603 meV. They are attributed to band-to-band and band-to-acceptor transitions, respectively, and an acceptor binding energy of ∼70 meV is deduced. In hole-conducting films with Mg concentrations in the window region, no photoluminescence is observed; this is attributed to electron trapping by deep states which are empty for Fermi levels close to the valence band edge. * Corresponding author: JWAger@lbl.gov

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Inversion and accumulation layers at InN surfaces

Cited by 38 publications

References 29 publications

Structural, electrical and optical characterization of MOCVD grown In-rich InGaN layers

Structural, electrical and optical characterization of MOCVD grown In-rich InGaN layers

Search for free holes in InN:Mg-interplay between surface layer and Mg-acceptor doped interior

Hole transport and photoluminescence in Mg-doped InN

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