Structural, electrical and optical characterization of MOCVD grown In-rich InGaN layers

DFT Calculation on the Electronic Structure and Optical Properties of InxGa1-xN Alloy Semiconductors

“…The wavelength range of absorption and transmission of InxGa1-xN includes sunlight, infrared light and ultraviolet light. The stable transmission wavelength is longer, consistent with the changing trend of the experimental data in reference [22], it can be applied to a wide wavelength solar cell, a photoelectric device, and a sensor.…”

Phase separation of thick (∼1 µm) InxGa1−xN (x∼ 0.3) grown on AlN/Si(111): Simultaneous emergence of metallic In–Ga and GaN-rich InGaN

“…Phase separation in bulk InGaN has also been extensively studied. [9][10][11][12][13][14][15] According to the phase diagram of InGaN proposed by Ho and Stringfellow, 4) spinodal decomposition should result in the simultaneous formation of InN-rich InGaN and GaN-rich InGaN, as discussed by Doppalapudi et al 12) However, Doppalapudi et al 12) did not find such simultaneous formation of the two phases. They found only InN-rich In x Ga 1¹x N (x ³ 0.97) in an as-grown In 0.35 Ga 0.65 N film, while only GaN-rich InGaN (2ª ³ 34.5°) was observed after the annealing of the film at 675 °C.…”

“…By using AlN/Si(111) substrates, as described above, we have clearly observed the phase separation of epitaxial In x Ga 1¹x N into metallic In-Ga and GaN-rich In z Ga 1¹z N. It should be pointed out that the selection of the substrate and/ or interlayer for InGaN growth is also a critical issue in the observation of such phase separation. If a GaN template or a GaN buffer is used, as in many cases, [11][12][13][14] the peak for GaN-rich In z Ga 1¹z N(0002) is difficult to separate from the peak for the GaN(0002) template or buffer because the InN content in In z Ga 1¹z N is very small (³0.03). For example, we would not notice the phase separation if the films are grown on GaN templates at approximately 700 °C, as expected from the result shown in Fig.…”

In(Ga)N 3D Growth on GaN-Buffered On-Axis and Off-Axis (0001) Sapphire Substrates by MOCVD

“…Moret et al showed the broadening of the PL spectra measured at 2 K from about 60 meV in InN to about 90 meV in an In 1-x Ga x N alloy with a Ga molar fraction of 30% [29]. Tuna et al reported on the PL maximum at 810 meV in a In 1-x Ga x N sample with an indium molar fraction of 83% [30]. However, Kazazis et al presented that the In molar fraction of 80% led to a PL maximum of about 1.00 eV, a higher value than that measured in our samples [13].…”